生命周期: | Obsolete | 零件包装代码: | TO-92L |
包装说明: | CYLINDRICAL, O-PBCY-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.74 |
最大集电极电流 (IC): | 2 A | 集电极-发射极最大电压: | 10 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 420 |
JEDEC-95代码: | TO-92 | JESD-30 代码: | O-PBCY-T3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | BOTTOM |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 150 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSC2500DBU | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, TO-92L, 3 |
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KSC2500DTA | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, TO-92L, 3 |
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KSC2517 | SAMSUNG |
获取价格 |
NPN (HIGH SPEED SWITCHING INDUSTRIAL USE) |
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KSC2517-O | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast |
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KSC2517OJ69Z | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast |
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KSC2517-R | SAMSUNG |
获取价格 |
暂无描述 |
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KSC2517-Y | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast |
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KSC2517YJ69Z | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast |
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KSC2518 | FAIRCHILD |
获取价格 |
High Speed, High Voltage Switching |
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KSC2518 | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast |
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