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KSC2500BTA PDF预览

KSC2500BTA

更新时间: 2024-11-23 12:58:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体放大器小信号双极晶体管功率放大器
页数 文件大小 规格书
4页 40K
描述
Small Signal Bipolar Transistor, 2A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, TO-92L, 3 PIN

KSC2500BTA 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:999
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.74
最大集电极电流 (IC):2 A集电极-发射极最大电压:10 V
配置:SINGLE最小直流电流增益 (hFE):200
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:NPN
最大功率耗散 (Abs):0.9 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

KSC2500BTA 数据手册

 浏览型号KSC2500BTA的Datasheet PDF文件第2页浏览型号KSC2500BTA的Datasheet PDF文件第3页浏览型号KSC2500BTA的Datasheet PDF文件第4页 
KSC2500  
Medium Power Amplifier & Low Saturation  
TO-92L  
1. Emitter 2. Collector 3. Base  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
* Collector Current (Pulse)  
Base Current  
30  
V
V
CBO  
30  
CES  
CEO  
EBO  
10  
V
6
V
I
I
I
2
5
A
C
A
CP  
B
0.5  
A
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
900  
mW  
°C  
°C  
C
T
150  
J
T
-55 ~ 150  
STG  
* PW10ms, Duty Cycle30%  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Collector Cut-off Current  
Emitter Cut-off Current  
Test Condition  
Min.  
Typ.  
Max.  
100  
Units  
I
I
V
V
=30V, I =0  
nA  
nA  
V
CBO  
EBO  
CB  
EB  
E
=6V, I =0  
100  
C
BV  
BV  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
DC Current Gain  
I =10mA, I =0  
10  
6
CBO  
EBO  
C
B
I =1mA, I =0  
V
E
C
h
h
V
V
=1V, I =0.5A  
140  
70  
600  
FE 1  
FE 2  
CE  
CE  
C
=1V, I =2A  
200  
0.2  
C
V
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
I =2A, I =50mA  
0.5  
1.5  
V
V
CE  
C
B
V
=1V, I =2A  
0.86  
150  
27  
BE  
CE  
CE  
CB  
C
f
Current Gain Bandwidth Product  
Output Capacitance  
V
V
=1V, I =0.5A  
MHz  
pF  
T
C
C
=10V, I =0, f=1MHz  
ob  
E
h
Classification  
FE1  
Classification  
A
B
C
D
h
140 ~ 240  
200 ~ 330  
300 ~ 450  
420 ~ 600  
FE1  
©2002 Fairchild Semiconductor Corporation  
Rev. A2, September 2002  

KSC2500BTA 替代型号

型号 品牌 替代类型 描述 数据表
KSC2500BBU FAIRCHILD

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Small Signal Bipolar Transistor, 2A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, TO-92L, 3

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