5秒后页面跳转
2SC3356-T1B-A PDF预览

2SC3356-T1B-A

更新时间: 2024-11-01 12:33:15
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
9页 189K
描述
NPN Silicon RF Transistor

2SC3356-T1B-A 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.42
Is Samacsys:N最大集电极电流 (IC):0.1 A
基于收集器的最大容量:1 pF集电极-发射极最大电压:12 V
配置:Single最小直流电流增益 (hFE):50
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN最大功率耗散 (Abs):0.2 W
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):7000 MHzBase Number Matches:1

2SC3356-T1B-A 数据手册

 浏览型号2SC3356-T1B-A的Datasheet PDF文件第2页浏览型号2SC3356-T1B-A的Datasheet PDF文件第3页浏览型号2SC3356-T1B-A的Datasheet PDF文件第4页浏览型号2SC3356-T1B-A的Datasheet PDF文件第5页浏览型号2SC3356-T1B-A的Datasheet PDF文件第6页浏览型号2SC3356-T1B-A的Datasheet PDF文件第7页 
PreliminaryData Sheet  
2SC3356  
R09DS0021EJ0300  
Rev.3.00  
NPN Silicon RF Transistor  
Jun 28, 2011  
NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold  
FEATURES  
Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz  
High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz  
<R>  
ORDERING INFORMATION  
Part Number  
2SC3356  
Order Number  
2SC3356-A  
Package  
Quantity  
Supplying Form  
3-pin Minimold 50 pcs (Non reel)  
• 8 mm wide embossed taping  
• Pin 3 (Collector) face the perforation side of the tape  
(Pb-Free)  
2SC3356-T1B  
2SC3356-T1B-A  
3 kpcs/reel  
Remark To order evaluation samples, please contact your nearby sales office.  
The unit sample quantity is 50 pcs.  
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)  
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
20  
12  
V
3.0  
V
100  
mA  
mW  
°C  
°C  
Note  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
Ptot  
200  
Tj  
150  
Tstg  
65 to +150  
Note Free air  
CAUTION  
Observe precautions when handling because these devices are sensitive to electrostatic discharge.  
The mark <R> shows major revised points.  
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.  
R09DS0021EJ0300 Rev.3.00  
Jun 28, 2011  
Page 1 of 7  

2SC3356-T1B-A 替代型号

型号 品牌 替代类型 描述 数据表
2SC3356 RENESAS

功能相似

NPN Silicon RF Transistor
2SC3356-A RENESAS

功能相似

NPN Silicon RF Transistor

与2SC3356-T1B-A相关器件

型号 品牌 获取价格 描述 数据表
2SC3356-T1B-A-Q RENESAS

获取价格

UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC3356-T1B-A-R RENESAS

获取价格

UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC3356-T1B-A-S RENESAS

获取价格

UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC3356-T1B-A-YQ RENESAS

获取价格

UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC3356-T1B-A-YR RENESAS

获取价格

UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC3356-T1B-A-YS RENESAS

获取价格

UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC3356-T1B-Q RENESAS

获取价格

暂无描述
2SC3356-T1B-R RENESAS

获取价格

UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-3
2SC3356-T1B-R23 RENESAS

获取价格

UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-3
2SC3356-T1B-R24 RENESAS

获取价格

UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-3