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2SC3356 PDF预览

2SC3356

更新时间: 2024-09-27 12:33:15
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体晶体管
页数 文件大小 规格书
9页 189K
描述
NPN Silicon RF Transistor

2SC3356 数据手册

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PreliminaryData Sheet  
2SC3356  
R09DS0021EJ0300  
Rev.3.00  
NPN Silicon RF Transistor  
Jun 28, 2011  
NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold  
FEATURES  
Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz  
High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz  
<R>  
ORDERING INFORMATION  
Part Number  
2SC3356  
Order Number  
2SC3356-A  
Package  
Quantity  
Supplying Form  
3-pin Minimold 50 pcs (Non reel)  
• 8 mm wide embossed taping  
• Pin 3 (Collector) face the perforation side of the tape  
(Pb-Free)  
2SC3356-T1B  
2SC3356-T1B-A  
3 kpcs/reel  
Remark To order evaluation samples, please contact your nearby sales office.  
The unit sample quantity is 50 pcs.  
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)  
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
20  
12  
V
3.0  
V
100  
mA  
mW  
°C  
°C  
Note  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
Ptot  
200  
Tj  
150  
Tstg  
65 to +150  
Note Free air  
CAUTION  
Observe precautions when handling because these devices are sensitive to electrostatic discharge.  
The mark <R> shows major revised points.  
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.  
R09DS0021EJ0300 Rev.3.00  
Jun 28, 2011  
Page 1 of 7  

2SC3356 替代型号

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