Datasheet > 2SC3356DWE

2SC3356DWE

更新时间： 2024-09-24 17:01:43

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	269K
描述
12V,0.1A,General Purpose NPN Bipolar Transistor

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中文翻译

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数据手册

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2SC3356DWE 数据手册

Dual NPN Silicon Epitaxial Planar Transistor

2SC3356DWE

Features



Low noise and high gain

High power gain

Mechanic al Data



Case: SOT-363

Molding compound: UL flammability classification rating 94V-0

Terminals: Tin-plated; solderability per MIL-STD-202, Method 208

SOT-363

Ordering Information

Part Number

Package

SOT-363

Shipping Quantity

Marking Code

R23E/R24E/R25E

2SC3356DWE

3000 pcs / Tape & Reel

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current (continuous)

Collector Power Dissipation

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

100

°C

P_D

250

Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +150

-65 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Air

R_θJA

500

°C /W

STM0770A: May 2023 [P]

www.gmesemi.com

12 3 4

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