Datasheet > 2SC3356KB

2SC3356KB

更新时间： 2024-01-02 00:50:42

品牌	Logo	应用领域
时科 - SHIKUES		/
页数	文件大小	规格书
3页	829K
描述
NPN Silicon RF Transistor

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中文翻译

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2SC3356KB 数据手册

2SC3356K

NPN SILICON RF TRANSISTOR

·Ultra high frequency low noise transistor

·Silicon epitaxial bipolar process.

·High power gain, low noise figure,

·high dynamic range and ideal current characteristics,

·SC-59 chip package, mainly used in VHF, UHF and CATV

·high frequency wideband low noise amplifier.

SC-59

Feature

High gain:︱S21

Low noise: NF

1：Base 2：Emitter 3：Collector

=20mA，f=1GHz

=7mA， f=1GHz

︱2

TYP. Value is 11dB

TYP. Value is 1.5dB

TYP. Value is 7GHz

CE=10V，I

(TYP.)

C=20mA，f=1GHz

Absolute Maximum Ratings

TA=25℃ Unless Otherwise noted

PARAMETER

SYMBLE

MAXIMUM VALUE

UNIT

Collector-base breakdown voltage

VCBO

VCEO

VEBO

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector current

100

200

150

+150 ℃

℃

Collector Power Dissipation

Junction Temperature

Storage Temperature

Tstg

-65

Tstg

hFE Classification (@VCE=10V,IC=20mA)

Classification

Marking

hFE

R24

R25

90-140

130-180

170-250

REV.08

1 of 3

12 3

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2SC3356Q-G	COMCHIP	获取价格	General Purpose Transistor