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2SC3356R23 PDF预览

2SC3356R23

更新时间: 2024-11-12 20:33:03
品牌 Logo 应用领域
瑞萨 - RENESAS 放大器光电二极管晶体管
页数 文件大小 规格书
10页 226K
描述
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-3

2SC3356R23 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.61
其他特性:LOW NOISE最大集电极电流 (IC):0.1 A
基于收集器的最大容量:1 pF集电极-发射极最大电压:12 V
配置:SINGLE最小直流电流增益 (hFE):50
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.2 W
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):7000 MHzBase Number Matches:1

2SC3356R23 数据手册

 浏览型号2SC3356R23的Datasheet PDF文件第2页浏览型号2SC3356R23的Datasheet PDF文件第3页浏览型号2SC3356R23的Datasheet PDF文件第4页浏览型号2SC3356R23的Datasheet PDF文件第5页浏览型号2SC3356R23的Datasheet PDF文件第6页浏览型号2SC3356R23的Datasheet PDF文件第7页 
To our customers,  
Old Company Name in Catalogs and Other Documents  
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology  
Corporation, and Renesas Electronics Corporation took over all the business of both  
companies. Therefore, although the old company name remains in this document, it is a valid  
Renesas Electronics document. We appreciate your understanding.  
Renesas Electronics website: http://www.renesas.com  
April 1st, 2010  
Renesas Electronics Corporation  
Issued by: Renesas Electronics Corporation (http://www.renesas.com)  
Send any inquiries to http://www.renesas.com/inquiry.  

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