Datasheet > 晶体管 > 射频小信号双极晶体管> 2SC3356-S-A

2SC3356-S-A

更新时间： 2024-02-28 18:45:49

品牌	Logo	应用领域
日电电子 - NEC		晶体放大器小信号双极晶体管射频小信号双极晶体管微波
页数	文件大小	规格书
9页	115K
描述
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, MINIMOLD PACKAGE-3

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技术参数
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2SC3356-S-A 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.59
Base Number Matches：	1

2SC3356-S-A 数据手册

DATA SHEET

SILICON TRANSISTOR

2SC3356

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION

PACKAGE DIMENSIONS

The 2SC3356 is an NPN silicon epitaxial transistor designed for low

noise amplifier at VHF, UHF and CATV band.

(Units: mm)

2.8±0.2

1.5

It has dynamic range and good current characteristic.

+0.1

−0.15

0.65

FEATURES

•

Low Noise and High Gain

NF = 1.1 dB TYP., G^a= 11 dB TYP. @V^CE= 10 V, I^C= 7 mA, f = 1.0 GHz

High Power Gain

•

MAG = 13 dB TYP. @V^CE= 10 V, I^C= 20 mA, f = 1.0 GHz

ABSOLUTE MAXIMUM RATINGS (T^A= 25 C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

V^CBO

V^CEO

V^EBO

I^C

Marking

3.0

100

Total Power Dissipation

Junction Temperature

Storage Temperature

P^T

200

PIN CONNECTIONS

1. Emitter

2. Base

T^j

150

T^stg

65 to +150

3. Collector

ELECTRICAL CHARACTERISTICS (T^A= 25 C)

CHARACTERISTIC

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

V^CB= 10 V, I^E= 0

I^CBO

1.0

300

I^EBO

V^EB= 1.0 V, I^C= 0

h^FE*

120

V^CE= 10 V, I^C= 20 mA

V^CB= 10 V, I^E= 0, f = 1.0 MHz

Gain Bandwidth Product

Feed-Back Capacitance

Insertion Power Gain

Noise Figure

f^T

GHz

C^re**

0.55

11.5

1.1

1.0

2.0

S²¹e

V^CE= 10 V, I^C= 20 mA, f = 1.0 GHz

V^CE= 10 V, I^C= 7 mA, f = 1.0 GHz

Pulse Measurement PW 350 s, Duty Cycle 2 %

** The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.

h^FEClassification

Class

Marking

h^FE

R23/Q *

R23

R24/R *

R24

R25/S *

R25

50 to 100

80 to 160

125 to 250

* Old Specification / New Specification

Document No. P10356EJ5V1DS00 (5th edition)

Date Published March 1997 N

Printed in Japan

1985

12 3 4 5 6 7...9

中文翻译

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与2SC3356-S-A相关器件

型号	品牌	获取价格	描述	数据表
2SC3356S-A	RENESAS	获取价格	TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),SOT-346
2SC3356S-G	COMCHIP	获取价格	General Purpose Transistor
2SC3356S-T1B	NEC	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-3
2SC3356S-T1B-A	RENESAS	获取价格	TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),SOT-346
2SC3356SW	BL Galaxy Electrical	获取价格	12V,0.1A,General Purpose NPN Bipolar Transistor
2SC3356T	BL Galaxy Electrical	获取价格	12V,0.1A,General Purpose Dual NPN Bipolar Transistor
2SC3356-T1	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC3356-T1B	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC3356-T1B	RENESAS	获取价格	NPN Silicon RF Transistor
2SC3356-T1B-A	RENESAS	获取价格	NPN Silicon RF Transistor

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