Datasheet > 2SC3356S-G

2SC3356S-G

更新时间： 2024-02-15 16:08:50

品牌	Logo	应用领域
上华 - COMCHIP		/
页数	文件大小	规格书
4页	134K
描述
General Purpose Transistor

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中文翻译

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数据手册

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2SC3356S-G 数据手册

General Purpose Transistor

2SC3356-G Series

RoHS Device

Features

- Low noise and high gain.

- High power gain.

- Designed for low noise amplifier.

SOT-23

1 : BASE

2 : EMITTER

3 : COLLECTOR

Circuit Diagram

Collector

0.122(3.10)

0.106(2.70)

0.059(1.50)

0.043(1.10)

Base

0.079(2.00)

0.071(1.80)

Emitter

0.004(0.10)

Typ.

Maximum Ratings (at TA=25°C unless otherwise noted)

0.039(1.00)

Typ.

0.102(2.60)

0.087(2.20)

Symbol

Parameter

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

Value

Unit

VCBO

VCEO

VEBO

0.004(0.10)

0.001(0.02)

0.016(0.40)

Typ.

0.019(0.48)

0.014(0.35)

Collector current - continuous

Collector dissipation

100

°C

Dimensions in inches and (millimeter)

200

Junction temperature

150

Storage temperature

Tstg

-65~+150

Electrical Characteristics (at TA=25°C unless otherwise noted)

Symbol

Typ

Parameter

Conditions

Min

Max

Unit

Collector-Base breakdown voltage

Collector-Emitter breakdown voltage

Emitter-Base breakdown voltage

IC =10μA , IE=0

V(BR)CBO

V(BR)CEO

V(BR)EBO

IC =1mA , IB=0

IE =10μA , IC=0

µA

VCB=10V , IE=0

Collector cut-off current

Emitter cut-off current

DC current gain

ICBO

IEBO

hFE

VEB=1V , IC=0

VCE=10V , IC=20mA

VCE=10V , IC=20mA , f=1GHZ

VCB=10V , IE=0 , f=1MHZ

VCB=10V , IC=7mA , f=1GHZ

120

300

Transition frequency

Insertion power gain

Feed-back capacitance

Noise Figure

|S21e|²

GHZ

11.5

0.55

1.1

Cre

1.0

2.0

Classification Of hFE

2SC3356Q-G

50-100

2SC3356R-G

80-160

2SC3356S-G

125-250

R25

Part No.

Range

Marking

R23

R24

Company reserves the right to improve product design , functions and reliability without notice.

REV: A

Page 1

QW-BTR48

Comchip Technology CO., LTD.

12 3 4

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