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2SC3356T PDF预览

2SC3356T

更新时间: 2024-11-02 17:01:55
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
4页 386K
描述
12V,0.1A,General Purpose Dual NPN Bipolar Transistor

2SC3356T 数据手册

 浏览型号2SC3356T的Datasheet PDF文件第2页浏览型号2SC3356T的Datasheet PDF文件第3页浏览型号2SC3356T的Datasheet PDF文件第4页 
NPN Silicon Epitaxial Planar Transistor  
2SC3356T  
Features  
Low noise and high gain  
High power gain  
Mechanic al Data  
Case: SOT-523  
Molding compound: UL flammability classification rating 94V-0  
Terminals: Tin-plated; solderability per MIL-STD-202, Method 208  
SOT-523  
Ordering Information  
Part Number  
Package  
SOT-523  
Shipping Quantity  
Marking Code  
2SC3356T  
3000 pcs / Tape & Reel  
R23/R24/R25  
Maximum Ratings (@ TA = 25°C unless otherwise specified)  
Parameter  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Current (continuous)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
20  
Unit  
V
12  
V
3
V
100  
mA  
Thermal Characteristics  
Parameter  
Power Dissipation  
Symbol  
PD  
Value  
200  
Unit  
mW  
°C  
Junction Temperature Range  
Storage Temperature Range  
TJ  
-65 ~ +150  
-65 ~ +150  
TSTG  
°C  
STM0208A: June 2021  
www.gmesemi.com  
1

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