是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.57 | 峰值回流温度(摄氏度): | NOT SPECIFIED |
处于峰值回流温度下的最长时间: | NOT SPECIFIED |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC3356S | NEC |
获取价格 |
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | SOT-346 | |
2SC3356-S | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic | |
2SC3356-S-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic | |
2SC3356S-A | RENESAS |
获取价格 |
TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),SOT-346 | |
2SC3356S-G | COMCHIP |
获取价格 |
General Purpose Transistor | |
2SC3356S-T1B | NEC |
获取价格 |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-3 | |
2SC3356S-T1B-A | RENESAS |
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TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),SOT-346 | |
2SC3356SW | BL Galaxy Electrical |
获取价格 |
12V,0.1A,General Purpose NPN Bipolar Transistor | |
2SC3356T | BL Galaxy Electrical |
获取价格 |
12V,0.1A,General Purpose Dual NPN Bipolar Transistor | |
2SC3356-T1 | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic |