Datasheet > 2SC3356-R23-HF

2SC3356-R23-HF

更新时间： 2024-11-13 01:04:19

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描述
NPN Transistors

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中文翻译

获取价格

数据手册

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2SC3356-R23-HF 数据手册

SMD Type

Transistors

NPN Transistors

2SC3356-HF

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

Low noise and high gain.

NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz

High power gain.

+0.1

-0.1

+0.05

-0.01

0.95

0.1

+0.1

-0.1

1.9

MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz

● Pb−Free Package May be Available. The G−Suffix Denotes a

Pb−Free Lead Finish

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector to base voltage

Symbol

VCBO

VCEO

VEBO

Rating

Unit

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Total power dissipation

Junction temperature

3.0

100

Ptot

200

150

Storage temperature range

Tstg

-65 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

CBO

Ic= 100 μA， I

Ic= 1 mA， I = 0

= 100 uA， I

E= 0

CEO

EBO

C= 0

CBO

EBO

CB= 10 V , I

^EB= 3V , I

= 0

Collector-emitter saturation voltage *

Base - emitter saturation voltage *

CE(sat)

BE(sat)

=50 mA, I

^CE= 10V, I

=5mA

0.4

1.2

400

B=5mA

DC current gain

hFE

= 20mA

Insertion power gain

Noise figure

|S21e | ²

CE = 10 V, I

= 20 mA, f= 1GHz

= 7 mA, f= 1GHz

11.5

1.1

0.55

Reverse transfer capacitance

Transition frequency

Cre

CB= 10V, I

^CE= 10V, I

= 0,f=1MHz

= 20mA

GHz

*. Pulse measurement: PW

350 s, Duty Cycle

2%.

hFE Classification

Type

Range

Marking

2SC3356-R23-HF 2SC3356-R24-HF 2SC3356-R25-HF 2SC3356-R26-HF

50-100

R23

80-160

R24

125-250

250-400

R25

R26

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