Datasheet > 2SC3356R23

2SC3356R23

更新时间： 2024-11-11 23:20:15

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管
页数	文件大小	规格书
8页	103K
描述
TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 100MA I(C) \| SOT-346

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SC3356R23 数据手册

DATA SHEET

SILICON TRANSISTOR

2SC3356

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION

PACKAGE DIMENSIONS

The 2SC3356 is an NPN silicon epitaxial transistor designed for low

noise amplifier at VHF, UHF and CATV band.

(Units: mm)

2.8±0.2

1.5

It has dynamic range and good current characteristic.

+0.1

−0.15

0.65

FEATURES

•

Low Noise and High Gain

NF = 1.1 dB TYP., G^a= 11 dB TYP. @V^CE= 10 V, I^C= 7 mA, f = 1.0 GHz

High Power Gain

•

MAG = 13 dB TYP. @V^CE= 10 V, I^C= 20 mA, f = 1.0 GHz

ABSOLUTE MAXIMUM RATINGS (T^A= 25 C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

V^CBO

V^CEO

V^EBO

I^C

Marking

3.0

100

Total Power Dissipation

Junction Temperature

Storage Temperature

P^T

200

PIN CONNECTIONS

1. Emitter

2. Base

T^j

150

T^stg

65 to +150

3. Collector

ELECTRICAL CHARACTERISTICS (T^A= 25 C)

CHARACTERISTIC

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

V^CB= 10 V, I^E= 0

I^CBO

1.0

300

I^EBO

V^EB= 1.0 V, I^C= 0

h^FE*

120

V^CE= 10 V, I^C= 20 mA

V^CB= 10 V, I^E= 0, f = 1.0 MHz

Gain Bandwidth Product

Feed-Back Capacitance

Insertion Power Gain

Noise Figure

f^T

GHz

C^re**

0.55

11.5

1.1

1.0

2.0

S²¹e

V^CE= 10 V, I^C= 20 mA, f = 1.0 GHz

V^CE= 10 V, I^C= 7 mA, f = 1.0 GHz

Pulse Measurement PW 350 s, Duty Cycle 2 %

** The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.

h^FEClassification

Class

Marking

h^FE

R23/Q *

R23

R24/R *

R24

R25/S *

R25

50 to 100

80 to 160

125 to 250

* Old Specification / New Specification

Document No. P10356EJ5V1DS00 (5th edition)

Date Published March 1997 N

Printed in Japan

1985

12 3 4 5 6 7 8

中文翻译

下载PDF

与2SC3356R23相关器件

型号	品牌	获取价格	描述	数据表
2SC3356-R23	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC3356-R23	KEXIN	获取价格	NPN Transistors
2SC3356-R23-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC3356-R23-HF	KEXIN	获取价格	NPN Transistors
2SC3356R23-T1B	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC3356R23-T1B-A	RENESAS	获取价格	TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),SOT-346
2SC3356R24	NEC	获取价格	TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 100MA I(C) \| SOT-346
2SC3356-R24	KEXIN	获取价格	NPN Transistors
2SC3356R24-A	RENESAS	获取价格	TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),SOT-346
2SC3356-R24-HF	KEXIN	获取价格	NPN Transistors