Datasheet > 2SC3356F

2SC3356F

更新时间： 2024-01-27 03:23:37

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	350K
描述
NPN Silicon Plastic Encapsulated Transistor

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技术参数
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2SC3356F 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.59
Base Number Matches：	1

2SC3356F 数据手册

2SC3356F

NPN Silicon

Plastic Encapsulated Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

SOT-323

FEATURES

ꢀLow noise amplifier at VHF,

UHF and CATV band.

ꢀLow Noise and High Gain

ꢀHigh Power Gain

Collector

Top View

C B

Emitter

Base

MARKING

Millimeter

Min. Max.

0.100 REF.

0.525 REF.

REF.

Min.

Max.

2.20

2.45

1.35

1.10

1.40

0.40

= hFE Coding

1.80

1.15

0.80

1.20

0.20

0.08

0.25

0.650 TYP.

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

V_CBO

V_CEO

V_EBO

I_C

Collector Current - Continuous

Total Device Dissipation

0.1

200

P_C

°C

Junction and Storage Temperature

T_J, T_STG

150, -55~150

ELECTRICAL CHARACTERISTICS ^(T_A^{= 25°C unless otherwise noted)}

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Collector–Base Breakdown Voltage

Collector–Emitter Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

BV_CBO

BV_CEO

I_CBO

I_C=10μA, I_E=0

I_C= 1mA, I_B=0

μA

_CB=10V, I_E=0

_EB=1V, I_C=0

I_EBO

DC Current Gain

h_FE

250

V_CE=10V, I_C= 20mA

Transition Frequency

f_T

GHz

V_CE=10V, I_C= 20mA

Collector Output Capacitance

V_CE=10V, I_C= 7mA, f = 1GHz

*pulse test: pulse width ≤ 350μs, Duty cycle ≤ 2%

CLASSIFICATION OF h_FE

Rank

Coding

80 - 160

Range

50 - 100

125 – 250

R24

Marking

R23

R25

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

01-June-2002 Rev. A

Page 1 of 2

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