Datasheet > 2SC3356-3

2SC3356-3

更新时间： 2024-09-24 01:13:51

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3页	1318K
描述
NPN Transistors

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中文翻译

获取价格

数据手册

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2SC3356-3 数据手册

SMD Type

Transistors

NPN Transistors

2SC3356

SOT-23-3

Unit: mm

+0.2

-0.1

2.9

0.4

+0.1

-0.1

Features

Low noise and high gain.

NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz

High power gain.

+0.02

-0.02

+0.1

-0.1

0.15

0.95

+0.1

-0.2

1.9

MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz

1. Base

2. Emitter

3. Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector to base voltage

Symbol

VCBO

VCEO

VEBO

Rating

Unit

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Total power dissipation

Junction temperature

3.0

100

Ptot

200

150

Storage temperature range

Tstg

-65 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

CBO

Ic= 100 μA， I

Ic= 1 mA， I = 0

= 100 uA， I

E= 0

CEO

EBO

C= 0

CBO

EBO

CB= 10 V , I

^EB= 3V , I

= 0

Collector-emitter saturation voltage *

Base - emitter saturation voltage *

CE(sat)

BE(sat)

=50 mA, I

^CE= 10V, I

=5mA

0.4

1.2

400

B=5mA

DC current gain

hFE

= 20mA

Insertion power gain

Noise figure

|S21e | ²

CE = 10 V, I

= 20 mA, f= 1GHz

= 7 mA, f= 1GHz

11.5

1.1

0.55

Reverse transfer capacitance

Transition frequency

Cre

CB= 10V, I

^CE= 10V, I

= 0,f=1MHz

= 20mA

GHz

*. Pulse measurement: PW

350 s, Duty Cycle

2%.

hFE Classification

Type

Range

Marking

2SC3356-R23

50-100

2SC3356-R24

80-160

2SC3356-R25

125-250

R25

2SC3356-R26

250-400

R26

R23

R24

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