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2SC3356DW PDF预览

2SC3356DW

更新时间: 2024-04-09 19:02:44
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
4页 271K
描述
12V,0.1A,General Purpose NPN Bipolar Transistor

2SC3356DW 数据手册

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Dual NPN Silicon Epitaxial Planar Transistor  
2SC3356DW  
Features  
Low noise and high gain  
High power gain  
Mechanic al Data  
Case: SOT-363  
Molding compound: UL flammability classification rating 94V-0  
Terminals: Tin-plated; solderability per MIL-STD-202, Method 208  
SOT-363  
Ordering Information  
Part Number  
Package  
SOT-363  
Shipping Quantity  
Marking Code  
2SC3356DW  
3000 pcs / Tape & Reel  
R23/R24/R25  
Maximum Ratings (@ TA = 25°C unless otherwise specified)  
Parameter  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Current (continuous)  
Collector Power Dissipation  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
Unit  
V
20  
12  
V
3
V
100  
mA  
mW  
°C  
°C  
PD  
250  
Junction Temperature Range  
Storage Temperature Range  
TJ  
-55 ~ +150  
-65 ~ +150  
TSTG  
Thermal Characteristics  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Thermal Resistance Junction-to-Air  
RθJA  
-
-
500  
°C /W  
STM0748A: February 2023 [P]  
www.gmesemi.com  
1

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