Datasheet > 2SB1691_11

2SB1691_11

更新时间： 2024-09-23 12:32:39

品牌	Logo	应用领域
瑞萨 - RENESAS		放大器功率放大器
页数	文件大小	规格书
6页	94K
描述
Silicon PNP Epitaxial Planer Low Frequency Power Amplifier

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数据手册

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2SB1691_11 数据手册

Preliminary Datasheet

2SB1691

R07DS0272EJ0300

(Previous: REJ03G0482-0200)

Rev.3.00

Silicon PNP Epitaxial Planer

Low Frequency Power Amplifier

Mar 28, 2011

Features



Small size package: MPAK (SC–59A)

Large Maximum current: I_C= –1 A

Low collector to emitter saturation voltage: V_CE(sat)= –0.3 V max.(at I_C/I_B= –0.5 A/–0.05 A)

High power dissipation: P_C= 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm))

Complementary pair with 2SD2655

Outline

RENESAS Package code: PLSP0003ZB-A

(Package name: MPAK)

1. Emitter

2. Base

3. Collector

Note: Marking is “WL-“.

Absolute Maximum Ratings

(Ta = 25°C)

Item

Collector to base Voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

60

50

–6

–1

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

ic(peak)

P_C

–2

800*

150

C

Tstg

55 to +150

Note:

*When using alumina ceramic board (25 x 60 x 0.7 mm)

R07DS0272EJ0300 Rev.3.00

Mar 28, 2011

Page 1 of 4

12 3 4 5 6

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