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2SB1691WL-TL-E PDF预览

2SB1691WL-TL-E

更新时间: 2024-09-23 12:32:39
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体放大器小信号双极晶体管功率放大器光电二极管
页数 文件大小 规格书
6页 94K
描述
Silicon PNP Epitaxial Planer Low Frequency Power Amplifier

2SB1691WL-TL-E 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:MPAK
包装说明:SC-59A, MPAK-3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.7最大集电极电流 (IC):1 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):200JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):0.8 W子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):310 MHz
Base Number Matches:1

2SB1691WL-TL-E 数据手册

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Preliminary Datasheet  
2SB1691  
R07DS0272EJ0300  
(Previous: REJ03G0482-0200)  
Rev.3.00  
Silicon PNP Epitaxial Planer  
Low Frequency Power Amplifier  
Mar 28, 2011  
Features  
Small size package: MPAK (SC–59A)  
Large Maximum current: IC = –1 A  
Low collector to emitter saturation voltage: VCE(sat) = –0.3 V max.(at IC/IB = –0.5 A/–0.05 A)  
High power dissipation: PC = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm))  
Complementary pair with 2SD2655  
Outline  
RENESAS Package code: PLSP0003ZB-A  
(Package name: MPAK)  
3
1. Emitter  
2. Base  
3. Collector  
1
2
Note: Marking is “WL-“.  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Collector to base Voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
60  
50  
V
V
–6  
V
–1  
A
Collector peak current  
Collector power dissipation  
Junction temperature  
Storage temperature  
ic(peak)  
PC  
–2  
A
800*  
150  
mW  
C  
C  
Tj  
Tstg  
55 to +150  
Note:  
*When using alumina ceramic board (25 x 60 x 0.7 mm)  
R07DS0272EJ0300 Rev.3.00  
Mar 28, 2011  
Page 1 of 4  

2SB1691WL-TL-E 替代型号

型号 品牌 替代类型 描述 数据表
2SB1691WL-TL-H RENESAS

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