Datasheet > 2SB1694_1

2SB1694_1

更新时间： 2024-09-23 04:25:55

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
3页	71K
描述
General purpose amplification (−30V, −1A)

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中文翻译

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数据手册

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2SB1694_1 数据手册

2SB1694

Transistors

General purpose amplification (−30V, −1A)

2SB1694

zExternal dimensions (Unit : mm)

zApplication

Low frequency amplifier

Driver

1.25

2.1

zFeatures

1) A collector current is large.

2) Collector saturation voltage is low.

V^CE(sat)≤ −380mV

0.1Min.

Each lead has same dimensions

At I^C= −500mA / IB = −25mA

Abbreviated symbol : ES

ROHM : UMT3

EIAJ : SC-70

(1) Emitter

(2) Base

JEDEC : SOT-323

(3) Collector

zPackaging specifications

zAbsolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Symbol

Limits

−30

−6

−1

−2

200

150

Unit

A ^∗

°C

Package

Code

Taping

VCBO

VCEO

VEBO

T106

3000

Collector-emitter voltage

Emitter-base voltage

Basic ordering unit (pieces)

Type

2SB1694

Collector current

Power dissipation

Junction temperature

Tstg

Range of storage temperature

−55 to +150

∗Single pulse, P =1ms

zElectrical characteristics (Ta=25°C)

Parameter

Symbol

BV^CBO

BVCEO

BV^EBO

Min.

Typ.

Max.

−

Unit

Conditions

= −10µA

= −1mA

= −10µA

CB= −30V

EB= −6V

−30

−6

−

270

−

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

−

CBO

EBO

CE(sat)

−100

−380

680

−

MHz

Emitter cutoff current

−180

−

320

= −500mA, I

= −25mA

= −100mA^∗1

=100mA, f=100MHz ^∗1

Collector-emitter saturation voltage

DC current gain

CE= −2V, I

Transition frequency

CB= −10V, I

=0A, f=1MHz

Cob

−

Corrector output capacitance

∗1 Pulsed

Rev.A

1/2

12 3

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