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2SB1698T100 PDF预览

2SB1698T100

更新时间: 2024-09-23 12:52:39
品牌 Logo 应用领域
罗姆 - ROHM 晶体放大器小信号双极晶体管
页数 文件大小 规格书
3页 77K
描述
Low frequency amplifier

2SB1698T100 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:SC-62
包装说明:SMALL OUTLINE, R-PSSO-F3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:7.95
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):1.5 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):270
JESD-30 代码:R-PSSO-F3JESD-609代码:e2
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:TIN COPPER
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:10晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):280 MHz
Base Number Matches:1

2SB1698T100 数据手册

 浏览型号2SB1698T100的Datasheet PDF文件第2页浏览型号2SB1698T100的Datasheet PDF文件第3页 
2SB1698  
Transistors  
Low frequency amplifier  
2SB1698  
zDimensions (Unit : mm)  
zApplication  
Low frequency amplifier  
Driver  
zFeatures  
1) A collector current is large.  
2) VCE(sat) 370mV  
at IC =1A / IB =50mA  
Each lead has same dimensions  
ROHM : MPT3  
JEITA : SC-62  
JEDEC: SOT-89  
(1)Base  
(2)Collector  
(3)Emitter  
Abbreviated symbol: FL  
zPackaging specifications  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
Limits  
30  
30  
6  
Unit  
V
V
Package  
Taping  
T100  
VCBO  
VCEO  
VEBO  
Type  
Code  
Basic ordering unit (pieces)  
1000  
V
2SB1698  
I
C
1.5  
3  
500  
2
A
Collector current  
Power dissipation  
I
CP  
A1  
mW  
W2  
°C  
°C  
P
C
Junction temperature  
tj  
tstg  
150  
55 to +150  
Range of storage temperature  
1 Single pulse, P =1ms  
W
2 Mounted on a 40 40 0.7(mm)CERAMIC SUBSTRATE  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol  
Min.  
30  
30  
6  
270  
Typ.  
Max.  
Unit  
V
Conditions  
BVCBO  
BVCEO  
BVEBO  
I
I
I
C
=−10µA  
=−1mA  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
V
C
V
E
=−10µA  
CB=−30V  
EB=−6V  
I
CBO  
EBO  
CE(sat)  
FE  
100  
100  
370  
680  
nA  
nA  
mV  
MHz  
pF  
V
V
I
Emitter cutoff current  
Collector-emitter saturation voltage  
DC current gain  
V
200  
280  
13  
I
C=−1A, I  
B
=−50mA  
=−100mA∗  
=100mA, f=100MHz∗  
h
V
V
V
CE=−2V, I  
CE=−2V, I  
C
fT  
E
Transition frequency  
CB=−10V, I  
E
=0A, f=1MHz  
Cob  
Collector output capacitance  
Pulsed  
Rev.A  
1/2  

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