5秒后页面跳转
2SB1693 PDF预览

2SB1693

更新时间: 2024-11-10 22:52:39
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
3页 82K
描述
Silicon PNP epitaxial planar type

2SB1693 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SC-59
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.82
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:20 V
配置:SINGLE最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-G3JESD-609代码:e6
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子面层:Tin/Bismuth (Sn/Bi)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):170 MHzBase Number Matches:1

2SB1693 数据手册

 浏览型号2SB1693的Datasheet PDF文件第2页浏览型号2SB1693的Datasheet PDF文件第3页 
Transistors  
2SB1693  
Silicon PNP epitaxial planar type  
For general amplification  
Unit: mm  
+0.10  
–0.05  
0.40  
+0.10  
–0.06  
0.16  
Features  
3
Large collector current IC  
Mini type package, allowing downsizing of the equipment and auto-  
matic insertion through the tape packing and the magazine packing  
1
2
(0.95) (0.95)  
1.9 0.1  
+0.20  
2.90  
–0.05  
Absolute Maximum Ratings Ta = 25°C  
10˚  
Parameter  
Symbol  
Rating  
40  
Unit  
V
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) VCEO  
Emitter-base voltage (Collector open) VEBO  
1: Base  
2: Emitter  
3: Collector  
20  
V
15  
V
EIAJ: SC-59  
Mini3-G1 Package  
Collector current  
IC  
ICP  
PC  
Tj  
0.5  
1  
A
Peak collector current  
Collector power dissipation  
Junction temperature  
Storage temperature  
A
200  
mW  
°C  
°C  
Marking Symbol: 3D  
150  
Tstg  
55 to +150  
Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
hFE1  
Conditions  
Min  
40  
20  
15  
160  
100  
Typ  
Max  
Unit  
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Forward current transfer ratio *  
IC = −10 µA, IE = 0  
IC = −2 mA, IB = 0  
V
IE = −10 µA, IC = 0  
V
VCE = −2 V, IC = −100 mA  
VCE = −2 V, IC = −500 mA  
560  
hFE2  
Collector-emitter saturation voltage *  
Transition frequency  
VCE(sat) IC = −100 mA, IB = −10 mA  
IC = − 0.5 A, IB = −25 mA  
60  
300  
mV  
210 500  
fT  
VCB = −5 V, IE = 50 mA, f = 200 MHz  
VCB = −10 V, IE = 0, f = 1 MHz  
170  
16  
MHz  
pF  
Collector output capacitance  
Cob  
(Common base, input open circuited)  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Pulse measurement  
*
Publication date: September 2003  
SJC00292AED  
1

与2SB1693相关器件

型号 品牌 获取价格 描述 数据表
2SB1694 ROHM

获取价格

General purpose amplification (−30V, −1A)
2SB1694 CJ

获取价格

SOT-323
2SB1694 BL Galaxy Electrical

获取价格

30V,1A,Medium Power PNP Bipolar Transistor
2SB1694_09 ROHM

获取价格

General purpose amplification (?30V, ?1A)
2SB1694_1 ROHM

获取价格

General purpose amplification (−30V, −1A)
2SB1694FRAT106 ROHM

获取价格

Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMP
2SB1694T106 ETC

获取价格

TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 1A I(C) | SOT-323
2SB1694-TP MCC

获取价格

Small Signal Bipolar Transistor,
2SB1694-TP-HF MCC

获取价格

Small Signal Bipolar Transistor,
2SB1695 ROHM

获取价格

Low frequency amplifier