Datasheet > 2SB1698_1

2SB1698_1

更新时间： 2024-09-23 04:25:55

品牌	Logo	应用领域
罗姆 - ROHM		放大器
页数	文件大小	规格书
3页	79K
描述
Low frequency amplifier

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中文翻译

获取价格

数据手册

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2SB1698_1 数据手册

2SB1698

Transistors

Low frequency amplifier

2SB1698

zExternal dimensions (Units : mm)

zApplication

Low frequency amplifier

Driver

4.0

2.5

1.0

0.5

(1)

(2)

(3)

zFeatures

1) A collector current is large.

2) V^CE(sat)≤ −370mV

at I^C=−1A / IB =−50mA

Each lead has same dimensions

Abbreviated symbol: FL

(1)Base

(2)Collector

(3)Emitter

ROHM : MPT3

JEITA : SC-62

JEDEC: SOT-89

zPackaging specifications

zAbsolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

−30

−6

Unit

Package

Taping

VCBO

VCEO

VEBO

Type

Code

T100

1000

Basic ordering unit (pieces)

2SB1698

−1.5

−3

500

Collector current

Power dissipation

Junction temperature

150

°C

Range of storage temperature

1 Single pulse, PW=1ms

2 Mounted on a 40 40 0.7(mm)CERAMIC SUBSTRATE

Tstg

−55~+150

°C

zElectrical characteristics (Ta=25°C)

Parameter

Symbol

Min.

−30

−6

−

Typ.

−

Max.

−

Unit

Conditions

BV^CBO

BV^CEO

BV^EBO

=−10µA

=−1mA

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

−

=−10µA

CB=−30V

EB=−6V

CBO

EBO

CE(sat)

−

−100

−370

680

−

Emitter cutoff current

−

−200

−

C=−1A, I

=−50mA

=−100mA

=100mA, f=100MHz

=0A, f=1MHz

Collector-emitter saturation voltage

DC current gain

270

−

CE=−2V, I

280

MHz

CE=−2V, IE

Transition frequency

CB=−10V, I

Cob

−

Collector output capacitance

Pulsed

1/2

12 3

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