Datasheet > 2SB1694

2SB1694

更新时间： 2024-10-15 14:52:03

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
3页	535K
描述
SOT-323

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中文翻译

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数据手册

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2SB1694 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-323 Plastic-Encapsulate Transistors

2SB1694 TRANSISTOR (PNP)

SOT–323

FEATURES

z High DC Current Gain

z High Collector Current

z Low Collector-emitter Saturation Voltage

1. BASE

APPLICATIONS

2. EMITTER

3. COLLECTOR

Low Frequency Amplifier Drive

MARKING: ES

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

-30

Unit

Collector-Base Voltage

Collector-Emitter Voltage

-30

Emitter-Base Voltage

-6

Collector Current

-1

P_C

Collector Power Dissipation

200

℃/W

℃

R_ΘJA

T_J,T_stg

Thermal Resistance From Junction To Ambient

Operation Junction and Storage Temperature Range

625

-55～+150

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

-30

-6

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=-10µA, I_E=0

V_(BR)CEOI_C=-1mA, I_B=0

V_(BR)EBOI_E=-10µA, I_C=0

I_CBO

I_EBO

V_CB=-30V, I_E=0

V_EB=-5V, I_C=0

-100

680

Emitter cut-off current

DC current gain

h_FE*

V_CE(sat)

f_T

V_CE=-2V, I_C=-100mA

270

Collector-emitter saturation voltage

Transition frequency

I_C=-500mA, I_B=-25mA

-0.38

V_CE=-2V,I_c=-100mA, f=100MHz

320

MHz

Collector output capacitance

C_ob

V_CB=-10V, I_E=0, f=1MHz

*Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.

www.jscj-elec.com

Rev. - 2.0

12 3

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