Datasheet > 2SB1695KT146

2SB1695KT146

更新时间： 2024-11-10 23:20:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
2页	68K
描述
TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| 1.5A I(C) \| SOT-346

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数据手册

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2SB1695KT146 数据手册

2SB1695K

Transistors

Low frequency amplifier

2SB1695K

!External dimensions (Units : mm)

!Application

Low frequency amplifier

Driver

1.6

!Features

2.8

1) A collector current is large.

2) V^CE(sat)≤ −370mV

At I^C=− 1A / IB = −50mA

0.3Min.

Each lead has same dimensions

ROHM : SMT3

EIAJ : SC-59

Abbreviated symbol : FL

(1) Emitter

(2) Base

JEDEC : SOT-346

(3) Collector

!Packaging specifications

!Absolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Symbol

Limits

−30

−6

−1.5

−3

200

150

−55~+150

Unit

A ^∗

°C

Package

Taping

T146

VCBO

VCEO

VEBO

Code

Type

Collector-emitter voltage

Emitter-base voltage

Basic ordering unit (pieces)

3000

2SB1695K

Collector current

Power dissipation

Junction temperature

Tstg

Range of storage temperature

∗Single pulse, P =1ms

!Electrical characteristics (Ta=25°C)

Parameter

Symbol

BV^CBO

BVCEO

BV^EBO

Min.

Typ.

−

Max.

−

Unit

Conditions

−30

−6

−

270

−

=−10µA

=−1mA

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

−

=−10µA

CBO

EBO

CE(sat)

−100

−370

680

−

MHz

CB=−30V

EB=−6V

−

Emitter cutoff current

−200

−

280

C=−1A, I

=−50mA

=−100mA^∗

=100mA, f=100MHz^∗

=0A, f=1MHz

Collector-emitter saturation voltage

DC current gain

CE=−2V, I

CB=−10V, I

Transition frequency

Cob

−

Corrector output capacitance

∗ Pulsed

1/2

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