Datasheet > 2SB1710_1

2SB1710_1

更新时间： 2024-11-11 04:25:55

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
3页	107K
描述
General purpose amplification (−30V, −1A)

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数据手册

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2SB1710_1 数据手册

2SB1710

Transistors

General purpose amplification (−30V, −1A)

2SB1710

zExternal dimensions (Unit : mm)

zApplication

Low frequency amplifier

Driver

TSMT3

1.0MAX

2.9

0.85

0.7

0.4

(

)

zFeatures

1) A collector current is large.

2) Collector saturation voltage is low.

( )

0.95 0.95

1.9

0.16

VCE(sat) ≤ −350mV

(1) Base

at Ic = −500mA / I = −25mA

(2) Emitter

(3) Collector

Each lead has same dimensions

zPackaging specifications

zAbsolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Symbol

Limits

−30

−6

Unit

Package

Taping

VCBO

VCEO

VEBO

Type

Code

Collector-emitter voltage

Emitter-base voltage

Basic ordering unit (pieces)

3000

−1

−2

500

mW^∗2

2SB1710

Collector current

∗1

Power dissipation

Junction temperature

150

°C

Range of storage temperature

Tstg

−55~+150

°C

∗1Single pulse, P

=1ms

∗2Each Terminal Mounted on a Recommended

zElectrical characteristics (Ta=25°C)

Parameter

Symbol

BV^CBO

BV^CEO

BV^EBO

Min.

Typ.

Max.

−

Unit

Conditions

−30

−6

−

270

−

=−10µA

=−1mA

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

−

=−10µA

CB=−30V

EB=−6V

CBO

EBO

CE(sat)

−100

−350

680

−

MHz

Emitter cutoff current

−150

−

320

=−500mA, I =−25mA

Collector-emitter saturation voltage

DC current gain

∗

CE=−2V, I

C=−100mA

∗

CE=−2V, I

=100mA, f=100MHz

Transition frequency

CB=−10V, I

=0A, f=1MHz

Cob

−

Corrector output capacitance

∗ Pulsed

Rev.A

1/2

12 3

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