Datasheet > 2SB1732

2SB1732

更新时间： 2024-09-22 22:52:39

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
3页	103K
描述
Genera purpose amplification(−12V, −1.5A)

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2SB1732 数据手册

2SB1732

Transistors

Genera purpose amplification(−12V, −1.5A)

2SB1732

zExternal dimensions (Unit : mm)

zApplication

Low frequency amplifier

Driver

(3)

0.2

1.7

2.1

0.2

zFeatures

1) A collector current is large.

2) Collector saturation voltage is low.

V^CE(sat)≤ −200mV

0.15Max.

ROHM : TUMT3 Abbreviated symbol : EV

(1)Base

(2)Emitter

(3)Collector

at I^C= −500mA / IB = −25mA

zPackaging specifications

zAbsolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

−15

−12

−6

−1.5

−3

400

150

Unit

Package

Taping

VCBO

VCEO

VEBO

Type

Code

Basic ordering unit (pieces)

3000

2SB1732

Collector current

A^∗

mW^∗

°C

Power dissipation

Junction temperature

Range of storage temperature

Tstg

−55 to +150

°C

∗

Single pulse, P

=1ms

∗

Each Terhinal Mounted on a Recommended Land

zElectrical characteristics (Ta=25°C)

Parameter

Symbol

BV^CBO

BV^CEO

BV^EBO

Min.

Typ.

Max.

−

Unit

Conditions

−15

−12

−6

−

270

−

−85

−

400

=−10µA

=−1mA

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

−

=−10µA

CB=−15V

EB=−6V

CBO

EBO

CE(sat)

−100

−200

680

−

MHz

Emitter cutoff current

=−500mA, I =−25mA

Collector-emitter saturation voltage

DC current gain

∗

CE=−2V, I

C=−200mA

∗

CE=−2V, I

=200mA, f=100MHz

Transition frequency

CB=−10V, I

=0A, f=1MHz

Cob

−

Corrector output capacitance

∗ Pulsed

Rev.A

1/2

12 3

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