2SB1730TL

更新时间： 2024-09-23 13:04:15

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替代型号

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2SB1730TL 数据手册

2SB1730

Transistors

General purpose amplification(−12V, −2A)

2SB1730

zApplications

Low frequency amplifier

Deiver

zDimensions (Unit : mm)

zFeatures

1) A collector current is large.

2) Collector saturation voltage is low.

V^CE(sat)≤ −180mV

at I^C= −1A / IB= −50mA

ROHM : TUMT3

Abbreviated symbol : FV

(1) Base

(2) Emitter

(3) Collector

zPackaging specifications

Package

Taping

Type

Code

Basic ordering

unit (pieces)

3000

2SB1730

zAbsolute maximum ratings (Ta=25°C)

Parameter

Symbol

Limits

−15

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

VCBO

VCEO

VEBO

−12

−6

−2

Collector current

−4

A^∗

°C

Collector power dissipation

Junction temperature

400

150

Storage temperature

Tstg

−55 to +150

∗ Single pulse Pw=1ms

zElectrical characteristics (Ta=25°C)

Parameter

Symbol

Typ.

Max.

−

Unit

Conditions

Min.

−15

−12

−6

Collector-base breakdown voltage

Collector-emitter breakdown viltage

Emitter-base breakdown voltage

Collector cutoff current

BV^CBO

BVCEO

BVEBO

−

=−10µA

=−1mA

−

=−10µA

CB=−15V

EB=−6V

CBO

EBO

CE(sat)

−

−100

−

Emitter cutoff current

−

Collerctor-emitter saturation voltage

DC current transfer ratio

−120 −180

C=−1A, I

=−50mA

∗

270

−

680

−

CE=−2V, I

=−200mA

=200mA, f=100MHz

=0mA, f=1MHz

∗

Transition frequency

−

360

MHz

CE=−2V, I

Output capacitance

Cob

−

CB=−10V, I

Pulsed

∗

Rev.B

1/2

12 3

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2SB1730TL 替代型号

型号	品牌	替代类型	描述	数据表
2SB1690KT146	ROHM	类似代替	Small Signal Bipolar Transistor, 2A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, SMT3, SC-
2SB1690TL	ROHM	类似代替	Small Signal Bipolar Transistor, 2A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, TSMT3, 3
US6T6TR	ROHM	功能相似	Small Signal Bipolar Transistor, 2A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, TUMT6, 6

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