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2SB1731TE25 PDF预览

2SB1731TE25

更新时间: 2024-11-11 19:45:31
品牌 Logo 应用领域
罗姆 - ROHM 二极管
页数 文件大小 规格书
8页 2209K
描述
Rectifier Diode,

2SB1731TE25 技术参数

生命周期:ActiveReach Compliance Code:compliant
风险等级:5.73二极管类型:RECTIFIER DIODE
Base Number Matches:1

2SB1731TE25 数据手册

 浏览型号2SB1731TE25的Datasheet PDF文件第2页浏览型号2SB1731TE25的Datasheet PDF文件第3页浏览型号2SB1731TE25的Datasheet PDF文件第4页浏览型号2SB1731TE25的Datasheet PDF文件第5页浏览型号2SB1731TE25的Datasheet PDF文件第6页浏览型号2SB1731TE25的Datasheet PDF文件第7页 
RBR3L60B  
Schottky Barrier Diode  
Data sheet  
Outline  
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ ꢀꢀꢀꢀ  
ꢀ ꢀ ꢀ  
V
60  
3
V
A
A
R
I
o
I
50  
FSM  
ꢀ ꢀ ꢀ  
Features  
Inner Circuit  
High reliability  
Small power mold type  
Low V  
F
Application  
Packaging Specifications  
Packing  
General rectification  
Embossed Tape  
Reel Size(mm)  
Taping Width(mm)  
Quantity(pcs)  
180  
12  
1500  
TE25  
02  
Structure  
Silicon epitaxial planar  
Taping Code  
Marking  
(T =25ºC unless otherwise specified)  
Absolute Maximum Ratings  
c
Parameter  
Repetitive peak reverse voltage  
Reverse voltage  
Symbol  
Conditions  
Duty0.5  
Limits  
60  
60  
Unit  
V
V
V
RM  
V
Reverse direct voltage  
R
Glass epoxy mounted  
I
60Hzhalf sin waveformresistive load、  
Average rectified forward current  
3
A
A
o
T =75Max.  
c
60Hzhalf sin waveformNon-repetitive、  
I
Peak forward surge current  
50  
FSM  
one cycleT =25℃  
a
Junction temperature(1)  
Storage temperature  
-
-
150  
-55 150  
T
j
T
stg  
Note(1) To avoid occurrence of thermal runawayactual board is to be designed to fulfill dP /dT<1/R .  
d
j
th(j-a)  
(T =25ºC unless otherwise specified)  
Characteristics  
j
Parameter  
Forward voltage  
Symbol  
Conditions  
Min. Typ. Max. Unit  
V
I =3A  
F
-
-
0.56  
V
F
I
R
Reverse current  
V =60V  
R
-
-
150 μA  
Attention  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
www.rohm.com  
©2016- ROHMCo., Ltd.All rights reserved.  
1/5  
2019/05/28_Rev.002  

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