Datasheet > 2SB1733_1

2SB1733_1

更新时间： 2024-11-11 06:18:11

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
3页	105K
描述
General purpose amplification (−30V, −1A)

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数据手册

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2SB1733_1 数据手册

2SB1733

Transistors

General purpose amplification (−30V, −1A)

2SB1733

zDimensions (Unit : mm)

zApplication

Low frequency amplifier

Driver

zFeatures

1) A collector current is large.

2) Collector saturation voltage is low.

VCE(sat) : max. −350mV

at Ic = −500mA / IB = −25mA

ROHM :TUMT3

Abbreviated symbol : EW

(1) Base

(2) Emitter

(3) Collector

zPackaging specifications

zAbsolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Symbol

Limits

−30

−6

−1

−2

0.4

Unit

Package

Taping

VCBO

VCEO

VEBO

Type

Code

Collector-emitter voltage

Emitter-base voltage

Basic ordering unit (pieces)

3000

2SB1733

Collector current

∗1

∗2

∗3

°C

Power dissipation

0.8

150

−55 to +150

Junction temperature

Tstg

Range of storage temperature

∗1 Single pulse, P

=1ms

∗2 Each Terminal Mounted on a Recommended land pattern

∗3 Mounted on a 25mm×25mm× 0.8mm ceramic substrate

zElectrical characteristics (Ta=25°C)

Parameter

Symbol

Min.

Typ.

Max.

−

Unit

Conditions

BV^CBO

BVCEO

BV^EBO

−30

−6

−

270

−

=−10µA

=−1mA

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

−

=−10µA

CB=−30V

EB=−6V

CBO

EBO

CE(sat)

−100

−350

680

−

MHz

Emitter cutoff current

−150

−

320

=−500mA, I =−25mA

Collector-emitter saturation voltage

DC current gain

∗

CE=−2V, I

C=−100mA

∗

CE=−2V, I

=100mA, f=100MHz

Transition frequency

CB=−10V, I

=0A, f=1MHz

Cob

−

Corrector output capacitance

∗ Pulsed

Rev.B

1/2

12 3

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