Ordering number : ENA0474
2SB1740
SANYO Sem iconductors
DATA S HEET
PNP Epitaxial Planar Silicon Transistor
2SB1740
Driver Applications
Features
•
Large current capacitance.
• Wide ASO and high durability against breakdown.
• Adoption of MBIT process.
•
Attachment workability is good by Mica-less package.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
CBO
V
CEO
V
EBO
--160
--120
-- 6
V
V
I
C
--12
--20
3.0
A
Collector Current (Pulse)
I
A
CP
W
W
°C
°C
Collector Dissipation
P
C
Tc=25°C
75
Junction Temperature
Storage Temperature
Tj
Tstg
150
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
=--160V, I =0A
Unit
min
max
--0.1
--0.1
200
Collector Cutoff Current
Emitter Cutoff Current
I
V
V
V
V
V
V
mA
mA
CBO
CB
EB
CE
CE
CE
CB
E
I
=--4V, I =0A
C
EBO
h
h
1
=--5V, I =--1A
100
35
FE
FE
C
DC Current Gain
2
=--5V, I =--5A
C
Gain-Bandwidth Product
Output Capacitance
f
=--5V, I =--1A
C
10
280
MHz
pF
T
Cob
=--10V, f=1MHz
Continued on next page.
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