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2SB1731 PDF预览

2SB1731

更新时间: 2024-11-10 21:55:31
品牌 Logo 应用领域
罗姆 - ROHM 放大器
页数 文件大小 规格书
3页 76K
描述
Low frequency amplifier

2SB1731 数据手册

 浏览型号2SB1731的Datasheet PDF文件第2页浏览型号2SB1731的Datasheet PDF文件第3页 
2SB1731  
Transistors  
Low frequency amplifier  
2SB1731  
zExternal dimensions (Unit : mm)  
zApplication  
Low frequency amplifier  
Driver  
(3)  
0.2  
1.7  
2.1  
0.2  
zFeatures  
1) A collector current is large.  
2) VCE(sat) 370mV  
at IC =1A / IB =50mA  
0.15Max.  
ROHM : TUMT3 Abbreviated symbol : FL  
(1)Base  
(2)Emitter  
(3)Collector  
zPackaging specifications  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
Limits  
30  
30  
6  
1.5  
Unit  
V
V
V
A
Package  
Taping  
VCBO  
VCEO  
VEBO  
Type  
Code  
TL  
Basic ordering unit (pieces)  
3000  
2SB1731  
I
C
Collector current  
I
CP  
3  
A
Power dissipation  
Junction temperature  
Range of storage temperature  
P
Tj  
Tstg  
C
400  
150  
55 to +150  
mW  
°C  
°C  
Single pulse, PW=1ms  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol  
BVCBO  
BVCEO  
BVEBO  
Min.  
Typ.  
Max.  
Unit  
V
Conditions  
30  
30  
6  
I
I
I
C
=−10µA  
=−1mA  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
V
C
V
E
=−10µA  
CB=−30V  
EB=−6V  
I
CBO  
EBO  
CE(sat)  
FE  
100  
100  
370  
680  
nA  
nA  
mV  
V
V
I
Emitter cutoff current  
V
200  
I
C=−1A, I  
B
=−50mA  
=−100mA  
=100mA, f=100MHz  
=0A, f=1MHz  
Collector-emitter saturation voltage  
DC current gain  
h
270  
V
V
V
CE=−2V, I  
C
f
T
280  
13  
MHz  
pF  
CE=−2V, IE  
Transition frequency  
CB=−10V, I  
E
Cob  
Corrector output capacitance  
Pulsed  
1/2  

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