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2SB1713U PDF预览

2SB1713U

更新时间: 2024-10-15 14:55:51
品牌 Logo 应用领域
先科 - SWST 晶体管
页数 文件大小 规格书
5页 824K
描述
小信号晶体管

2SB1713U 数据手册

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2SB1713U  
PNP Silicon Epitaxial Planar Transistor  
Absolute Maximum Ratings (Ta = 25  
Parameter  
)
Symbol  
-VCBO  
-VCEO  
-VEBO  
-IC  
Value  
Unit  
V
Collector Base Voltage  
Collector Emitter Voltage  
Emitter Base Voltage  
20  
20  
V
6
V
Collector Current  
3
A
Peak Collector Current, Pulsed  
Total Power Dissipation  
-ICM  
6
0.9  
A
Ptot  
W
Operating Junction and Storage Temperature Range  
Tj,Tstg  
- 55 to + 150  
Thermal Characteristics  
Parameter  
Symbol  
RθJA  
Max.  
139  
Unit  
/W  
Thermal Resistance from Junction to Ambient 1)  
1) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.  
®
1 / 5  
Dated: 10/07/2023 Rev: 02  

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