Datasheet > 2SB1713

2SB1713

更新时间： 2024-09-23 04:25:55

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
3页	97K
描述
-3A / -12V Bipolar transistor

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2SB1713 数据手册

2SB1713

Transistors

-3A / -12V Bipolar transistor

2SB1713

zApplications

zExternal dimensions (Unit : mm)

Low frequency amplification, driver

MPT3

4.5

1.6

1.5

zFeatures

1) Collector current is high.

(1)

(2)

(3)

2) Low collector-emitter saturation voltage.

(Typ. = -250mV, at I^C= -1.5A, IB = -30mA)

0.4

0.5

3.0

0.4

1.5

(1)Base

(2)Collector

(3)Emitter

zStructure

Abbreviated symbol : XW

PNP epitaxial planar silicon transistor

zAbsolute maximum ratings (Ta=25°C)

zPackaging specifications

Parameter

Symbol

Limits

−15

−12

−6

Unit

Package

MPT3

Taping

T100

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

VCBO

VCEO

VEBO

Packaging type

Code

Part No.

Basic ordering unit (pieces) 1000

−3

2SB1713

Collector current

∗1

Pulse

−6

0.5 ∗2

Power dissipation

∗3

Junction temperature

150

°C

Storage temperature

Tstg

−55 to +150

∗1 Pw=1ms, Pulsed.

∗2 Each terminal mounted on a recommended land.

∗3 Mounted on a 40×40×0.7mm ceramic board.

zElectrical characteristics (Ta=25°C)

Parameter

Symbol

BVCEO

BV^CBO

BVEBO

Min. Typ. Max. Unit

Conditions

Collector-emitter breakdown voltage

Collector-base breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

−12

−15

−6

−

= −1mA

= −10µA

CB= −15V

EB= −6V

CBO

EBO

CE(sat)

−100

Emitter cut-off current

−

Collector-emitter saturation voltage

DC current gain

∗

−

−120 −250 mV

IC/IB= −1.5A/ −30mA

270

−

680

−

CE= −2V, I

= −500mA

=500mA , f=100MHz

=0mA , f=1MHz

Transition frequency

−

280

−

MHz

CE= −2V, I

CB= −10V , I

Collector output capacitance

Cob

∗ Pulsed

1/2

12 3

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