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2SB1710 PDF预览

2SB1710

更新时间: 2024-11-10 22:52:39
品牌 Logo 应用领域
罗姆 - ROHM /
页数 文件大小 规格书
3页 78K
描述
General purpose amplification (−30V, −1A)

2SB1710 数据手册

 浏览型号2SB1710的Datasheet PDF文件第2页浏览型号2SB1710的Datasheet PDF文件第3页 
2SB1710  
Transistors  
General purpose amplification (30V, 1A)  
2SB1710  
zExternal dimensions (Units : mm)  
zApplication  
Low frequency amplifier  
Driver  
2.8  
1.6  
zFeatures  
1) A collector current is large.  
2) Collector saturation voltage is low.  
VCE(sat) ≤ −350mV  
.1M0AX  
0.3 0.6  
Each lead has same dimensions  
at Ic = 500mA / IB = 25mA  
ROHM :TSMT3  
Abbreviated symbol : EW  
(1) Base  
(2) Emitter  
(3) Collector  
zPackaging specifications  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Symbol  
Limits  
Unit  
V
V
Package  
Taping  
Collector-base voltage  
VCBO  
VCEO  
VEBO  
30  
Type  
Code  
TL  
30  
6  
Collector-emitter voltage  
Emitter-base voltage  
Basic ordering unit (pieces)  
3000  
V
I
C
1  
2  
500  
150  
A
2SB1710  
Collector current  
1
I
CP  
A
mW  
°C  
2
P
Tj  
C
Power dissipation  
Junction temperature  
Range of storage temperature  
Tstg  
55~+150  
°C  
1Single pulse, P  
W=1ms  
2Each Terminal Mounted on a Recommended  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol  
BVCBO  
BVCEO  
BVEBO  
Min.  
30  
30  
6  
Typ.  
Max.  
Unit  
V
Conditions  
I
I
I
C
=−10µA  
=−1mA  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
V
C
V
E
=−10µA  
CB=−30V  
EB=−6V  
I
CBO  
EBO  
CE(sat)  
FE  
100  
100  
350  
680  
nA  
nA  
mV  
V
V
I
Emitter cutoff current  
V
150  
I
C
=−500mA, I  
B
=−25mA  
=−100mA  
=100mA, f=100MHz  
=0A, f=1MHz  
Collector-emitter saturation voltage  
DC current gain  
h
270  
V
V
V
CE=−2V, I  
C
f
T
320  
7
MHz  
pF  
CE=−2V, IE  
Transition frequency  
CB=−10V, I  
E
Cob  
Corrector output capacitance  
Pulsed  
1/2  

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