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2SB1697 PDF预览

2SB1697

更新时间: 2024-11-10 22:52:39
品牌 Logo 应用领域
罗姆 - ROHM 放大器
页数 文件大小 规格书
3页 105K
描述
Low Frequency Amplifier (-12V, -2A)

2SB1697 数据手册

 浏览型号2SB1697的Datasheet PDF文件第2页浏览型号2SB1697的Datasheet PDF文件第3页 
2SB1697  
Transistors  
Low Frequency Amplifier (-12V, -2A)  
2SB1697  
zExternal dimensions (Unit : mm)  
zFeatures  
Low VCE(sat)  
4.0  
2.5  
VCE(sat) ≤ −180mV  
(IC /IB=1A/50mA)  
1.0  
0.5  
(1)  
(2)  
(3)  
Each lead has same dimensions  
Abbreviated symbol: FV  
(1)Base  
ROHM : MPT3  
JEITA : SC-62  
JEDEC: SOT-89  
(2)Collector  
(3)Emitter  
zPackaging specifications  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
Limits  
15  
12  
6  
2  
4  
500  
150  
Unit  
V
V
Package  
Taping  
T100  
VCBO  
VCEO  
VEBO  
Type  
Code  
Basic ordering unit (pieces)  
1000  
V
2SB1697  
A(DC)  
A(Pulse)1  
mW2  
°C  
Collector current  
IC  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
Tj  
Tstg  
55 to +150  
°C  
1Single pulse, P  
=1ms  
W
2When mounted on a 40x40x0.7 mm ceramic board.  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol  
BVCBO  
BVCEO  
BVEBO  
Min.  
Typ.  
Max.  
Unit  
V
Conditions  
15  
12  
6  
270  
I
I
I
C
= −10µA  
= −1mA  
= −10µA  
CB= −15V  
EB= −6V  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
V
C
V
E
I
CBO  
EBO  
CE(sat)  
FE  
100  
100  
180  
680  
nA  
nA  
mV  
MHz  
pF  
V
V
I
Emitter cutoff current  
V
100  
360  
15  
IC/IB= −1A/ 50mA  
Collector-emitter saturation voltage  
DC current transfer ratio  
h
V
V
V
CE= −2V, I  
CE= −2V, I  
C
= −200mA∗  
=200mA, f=100MHz∗  
f
T
E
Transition frequency  
CB=−10V, I  
E
=0A, f=1MHz  
Cob  
Output capacitance  
Pulsed  
Rev.A  
1/2  

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