Datasheet > 2SB1694T106

2SB1694T106

更新时间： 2024-09-22 23:20:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管光电二极管放大器 PC
页数	文件大小	规格书
2页	68K
描述
TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| 1A I(C) \| SOT-323

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数据手册

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2SB1694T106 数据手册

2SB1694

Transistors

General purpose amplification (−30V, −1A)

2SB1694

!External dimensions (Units : mm)

!Application

Low frequency amplifier

Driver

1.25

2.1

!Features

1) A collector current is large.

2) Collector saturation voltage is low.

V^CE(sat)≤ −380mV

0.1Min.

Each lead has same dimensions

At I^C= −500mA / IB = −25mA

Abbreviated symbol : ES

ROHM : UMT3

EIAJ : SC-70

(1) Emitter

(2) Base

JEDEC : SOT-323

(3) Collector

!Packaging specifications

!Absolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Symbol

Limits

−30

−6

−1

−2

200

150

Unit

A ^∗

°C

Package

Taping

VCBO

VCEO

VEBO

Code

T106

3000

Collector-emitter voltage

Emitter-base voltage

Basic ordering unit (pieces)

Type

2SB1694

Collector current

Power dissipation

Junction temperature

Tstg

Range of storage temperature

−55~+150

∗Single pulse, P =1ms

!Electrical characteristics (Ta=25°C)

Parameter

Symbol

BV^CBO

BVCEO

BV^EBO

Min.

Typ.

Max.

−

Unit

Conditions

−30

−6

−

270

−

=−10µA

=−1mA

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

−

=−10µA

CBO

EBO

CE(sat)

−100

−380

680

−

MHz

CB=−30V

EB=−30V

Emitter cutoff current

−180

−

320

=−500mA, I

=−25mA

=−100mA^∗1

=100mA, f=100MHz^∗1

=0A, f=1MHz

Collector-emitter saturation voltage

DC current gain

CE=−2V, I

CB=−10V, I

Transition frequency

Cob

−

Corrector output capacitance

∗1 Pulsed

1/2

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