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2SB1694-TP PDF预览

2SB1694-TP

更新时间: 2024-11-11 19:09:47
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
2页 263K
描述
Small Signal Bipolar Transistor,

2SB1694-TP 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:compliant
风险等级:5.75湿度敏感等级:1
峰值回流温度(摄氏度):260处于峰值回流温度下的最长时间:10
Base Number Matches:1

2SB1694-TP 数据手册

 浏览型号2SB1694-TP的Datasheet PDF文件第2页 
M C C  
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20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
2SB1694  
Micro Commercial Components  
Features  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
High DC Current Gain  
PNP  
xꢀ  
xꢀ  
High Collector Current  
Gneral Purpose  
Transistors  
Low Collector-emitter Saturation Voltage  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
xꢀ  
·
·
Halogen free available upon request by adding suffix "-HF"  
SOT-323  
A
Maximum Ratings @ Ta = 25?(unless otherwise noted)  
D
C
Symbol  
IC  
Parameter  
Value  
-1.0  
Unit  
A
Collector Current  
C
B
PD  
Total Device Dissipation  
Junction Temperature  
0.2  
W
E
B
R
TJ  
150  
F
E
R
TSTG  
Storage Temperature Range  
-55 to +150  
Electrical Characteristics @ 25OC Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Max  
Unit  
H
G
J
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
(IC=-1mAdc,IB=0)  
Collector-Base Breakdown Voltage  
(IC=-10uAdc,IE=0)  
Collector-Base Breakdown Voltage  
(IE=-10uAdc,IC=0)  
Collector-Base Cutoff Current  
(VCB=-30Vdc, IE=0)  
K
V(BR)CEO  
-30  
-30  
-6.0  
V
DIMENSIONS  
INCHES  
V(BR)CBO  
V
MM  
DIM  
A
B
MIN  
.071  
.045  
MAX  
.087  
.053  
MIN  
1.80  
1.15  
MAX  
2.20  
1.35  
NOTE  
V
V(BR)EBO  
ICBO  
-0.1  
-0.1  
µAdc  
uAdc  
D
E
F
G
H
J
.026 Nominal  
0.65Nominal  
1.20  
.30  
Emitter-Base Cutoff Current  
(VEB=-5.0Vdc, IC=0)  
.047  
.055  
.016  
.004  
.039  
.010  
1.40  
.40  
IEBO  
.012  
.000  
.035  
.004  
.000  
.90  
.100  
.100  
1.00  
.250  
ON CHARACTERISTICS  
DC Current Gain  
270  
680  
h
FE  
(IC=-100mAdc, VCE=-2.0Vdc)  
Collector-Emitter Saturation Voltage  
(IC=-500mAdc, IB=-25mAdc)  
Transition Frequency  
(VCE=-2Vdc,IC=-100mAdc,f=100MHZ)  
Collector Output Capacitance  
(VCB=-10Vdc,IE=0,f=1MHZ)  
VCE(sat)  
-0.38  
Vdc  
MHZ  
PF  
Suggested Solder  
Pad Layout  
0.70  
320(typ)  
7(typ)  
f
T
Cob  
0.90  
mm  
1.90  
0.65  
0.65  
www.mccsemi.com  
1 of 2  
Revision: A  
2014/06/18  

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