2SB1691WL

更新时间： 2024-09-22 22:25:23

品牌	Logo	应用领域
瑞萨 - RENESAS		放大器功率放大器
页数	文件大小	规格书
5页	73K
描述
Silicon PNP Epitaxial Planer Low Frequency Power Amplifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SB1691WL 数据手册

2SB1691

Silicon PNP Epitaxial Planer

Low Frequency Power Amplifier

REJ03G0482-0200

(Previous ADE-208-1387A (Z))

Rev.2.00

Dec.09.2004

Features

•

Small size package: MPAK (SC–59A)

Large Maximum current: I_C= –1 A

Low collector to emitter saturation voltage: V_CE(sat)= –0.3 V max.(at I_C/I_B= –0.5 A/–0.05 A)

High power dissipation: P_C= 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm))

Complementary pair with 2SD2655

Outline

MPAK

1. Emitter

2. Base

3. Collector

Note: Marking is “WL-“.

Absolute Maximum Ratings

(Ta = 25°C)

Item

Collector to base Voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

−60

−50

–6

–1

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

ic(peak)

P_C

–2

800*

150

°C

Tstg

−55 to +150

Note:

*When using alumina ceramic board (25 x 60 x 0.7 mm)

Rev.2.00, Dec.09.2004, page 1 of 4

12 3 4 5

中文翻译

下载PDF

与2SB1691WL相关器件

型号	品牌	获取价格	描述	数据表
2SB1691WL-TL-E	RENESAS	获取价格	Silicon PNP Epitaxial Planer Low Frequency Power Amplifier
2SB1691WL-TL-H	RENESAS	获取价格	Silicon PNP Epitaxial Planer Low Frequency Power Amplifier
2SB1693	PANASONIC	获取价格	Silicon PNP epitaxial planar type
2SB1694	ROHM	获取价格	General purpose amplification (−30V, −1A)
2SB1694	CJ	获取价格	SOT-323
2SB1694	BL Galaxy Electrical	获取价格	30V,1A,Medium Power PNP Bipolar Transistor
2SB1694_09	ROHM	获取价格	General purpose amplification (?30V, ?1A)
2SB1694_1	ROHM	获取价格	General purpose amplification (−30V, −1A)
2SB1694FRAT106	ROHM	获取价格	Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMP
2SB1694T106	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| 1A I(C) \| SOT-323