2SB1691WL

更新时间： 2024-11-10 22:25:23

品牌	Logo	应用领域
瑞萨 - RENESAS		放大器功率放大器
页数	文件大小	规格书
5页	73K
描述
Silicon PNP Epitaxial Planer Low Frequency Power Amplifier

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2SB1691WL 数据手册

2SB1691

Silicon PNP Epitaxial Planer

Low Frequency Power Amplifier

REJ03G0482-0200

(Previous ADE-208-1387A (Z))

Rev.2.00

Dec.09.2004

Features

•

Small size package: MPAK (SC–59A)

Large Maximum current: I_C= –1 A

Low collector to emitter saturation voltage: V_CE(sat)= –0.3 V max.(at I_C/I_B= –0.5 A/–0.05 A)

High power dissipation: P_C= 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm))

Complementary pair with 2SD2655

Outline

MPAK

1. Emitter

2. Base

3. Collector

Note: Marking is “WL-“.

Absolute Maximum Ratings

(Ta = 25°C)

Item

Collector to base Voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

−60

−50

–6

–1

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

ic(peak)

P_C

–2

800*

150

°C

Tstg

−55 to +150

Note:

*When using alumina ceramic board (25 x 60 x 0.7 mm)

Rev.2.00, Dec.09.2004, page 1 of 4

12 3 4 5

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