生命周期: | Obsolete | 零件包装代码: | TO-92 |
包装说明: | CYLINDRICAL, O-PBCY-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.55 |
最大集电极电流 (IC): | 0.05 A | 集电极-发射极最大电压: | 300 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 80 |
JEDEC-95代码: | TO-92 | JESD-30 代码: | O-PBCY-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 0.75 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | BOTTOM | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1688TZ-E | RENESAS |
获取价格 |
Silicon PNP Epitaxial High voltage amplifier | |
2SB1689 | ROHM |
获取价格 |
General purpose amplification (-12V, -1.5A) | |
2SB1689_13 | ROHM |
获取价格 |
PNP -1.5A -12V Low Frequency Amplifier Transistors | |
2SB1689T106 | ROHM |
获取价格 |
PNP -1.5A -12V Low Frequency Amplifier Transistors | |
2SB1690 | ROHM |
获取价格 |
General purpose amplification(−12V, −2A) | |
2SB1690_05 | ROHM |
获取价格 |
General purpose amplification(â12V, â2A) | |
2SB1690_1 | ROHM |
获取价格 |
General purpose amplification(−12V, −2A) | |
2SB1690K | ROHM |
获取价格 |
General purpose amplification (-12V, -2A) | |
2SB1690KT146 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, SMT3, SC- | |
2SB1690TL | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, TSMT3, 3 |