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2SB1688 PDF预览

2SB1688

更新时间: 2024-11-13 06:19:23
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体放大器小信号双极晶体管
页数 文件大小 规格书
6页 162K
描述
Silicon PNP Epitaxial High voltage amplifier

2SB1688 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.55
最大集电极电流 (IC):0.05 A集电极-发射极最大电压:300 V
配置:SINGLE最小直流电流增益 (hFE):80
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:PNP最大功率耗散 (Abs):0.75 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

2SB1688 数据手册

 浏览型号2SB1688的Datasheet PDF文件第2页浏览型号2SB1688的Datasheet PDF文件第3页浏览型号2SB1688的Datasheet PDF文件第4页浏览型号2SB1688的Datasheet PDF文件第5页浏览型号2SB1688的Datasheet PDF文件第6页 
2SB1688  
Silicon PNP Epitaxial  
High voltage amplifier  
REJ03G0679-0300  
(Previous ADE-208-975A)  
Rev.3.00  
Aug.10.2005  
Features  
High breakdown voltage  
CEO = -300V min  
V
Outline  
RENESAS Package code: PRSS0003DA-A  
(Package name: TO-92 (1))  
er  
llector  
Base  
Absolute Maximum Ra
(Ta = 25°C)  
Item  
Collector to base vol
Collector to emitter volta
Emitter to base voltage  
Collector current  
bol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
–300  
Unit  
V
–300  
V
–5  
V
–50  
mA  
mW  
°C  
°C  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
750  
Tj  
150  
Tstg  
–55 to +150  
Rev.3.00 Aug 10, 2005 page 1 of 5  

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