Datasheet > 2SB1690

2SB1690

更新时间： 2024-09-24 22:52:39

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
3页	76K
描述
General purpose amplification(−12V, −2A)

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2SB1690 数据手册

2SB1690

Transistors

General purpose amplification(−12V, −2A)

2SB1690

!Applications

Low frequency amplifier

Deiver

!External dimensions (Unit : mm)

Each lead has

1.0MAX

same dimensions

0.4

0.85

0.7

(

)

!Features

0~0.1

1) A collector current is large.

2) Collector saturation voltage is low.

V^CE(sat)≤ −180mV

(

)

( )

0.95 0.95

1.9

0.16

at I^C= −1A / IB= −50mA

2.9

Abbreviated symbol : FV

ROHM : TSMT3

(1) Base

(2) Emitter

(3) Collector

!Packaging specifications

Package

Code

Taping

Type

Basic ordering

unit (pieces)

3000

2SB1690

!Absolute maximum ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

VCBO

VCEO

VEBO

−15

−12

−6

−2

Collector current

−4

A^∗

°C

Collector power dissipation

Junction temperature

500

150

Storage temperature

Tstg

−55 to +150

∗ Single pulse Pw=1ms

!Electrical characteristics (Ta=25°C)

Parameter

Symbol

BV^CBO

BVCEO

BVEBO

Typ.

Max.

Unit

Conditions

Min.

−15

−12

−6

Collector-base breakdown voltage

Collector-emitter breakdown viltage

Emitter-base breakdown voltage

Collector cutoff current

−

=−10µA

=−1mA

−

=−10µA

CB=−15V

EB=−6V

CBO

EBO

CE(sat)

−

−100

−

Emitter cutoff current

−

Collerctor-emitter saturation voltage

DC current transfer ratio

−120 −180

=−1mA, I

CE=−2V, I

B=−50mA

∗

270

−

680

−

=−200mA

=200mA, f=100MHz

=0mA, f=1MHz

∗

Transition frequency

−

360

MHz

Output capacitance

Cob

−

CB=−10V, I

Pulsed

∗

1/2

12 3

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