Datasheet > 2N6990JAN

2N6990JAN

更新时间： 2024-11-29 22:20:03

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体开关晶体管
页数	文件大小	规格书
2页	57K
描述
MULTIPLE NPN SILICON DUAL IN-LINE AND FLATPACK SWITCHING TRANSISTOR

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数据手册

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2N6990JAN 数据手册

TECHNICAL DATA

MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE AND FLATPACK

SWITCHING TRANSISTOR

Qualified per MIL-PRF-19500/ 559

Devices

Qualified Level

JAN

2N6989

2N6989U

JANTX

JANTXV

JANS

2N6990

MAXIMUM RATINGS ⁽¹⁾

Ratings

Symbol

Value

Units

Vdc

Collector-Emitter Voltage ⁽³⁾

Collector-Base Voltage ⁽³⁾

Emitter-Base Voltage ⁽³⁾

Collector Current ⁽³⁾

V_CEO

V_CBO

V_EBO

I_C

Vdc

TO- 116*

2N6989

6.0

Vdc

800

mAdc

Total Power Dissipation

@ T_A= +25⁰C

2N6989⁽²⁾

1.5

1.0

0.4

⁰C

P_D

2N6989U⁽²⁾

20 PIN LEADLESS*

2N6989U

2N6990⁽²⁾

Operating & Storage Junction Temperature Range

-65 to +200

T_op_,T

stg

1) Maximum voltage between transistors shall be ³ 500 Vdc

2) Derate linearly 8.57 mW/⁰C above T_A= +25⁰C for 2N6989 and 2N6989U

Derate linearly 2.286 mW/⁰C above T_A= +25⁰C for 2N6990

Ratings apply to total package.

14 PIN FLAT PACK*

2N6990

3) Ratings apply to each transistor in the array.

*See appendix A for package

outline

ELECTRICAL CHARACTERISTICS (T_A= 25⁰C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

I_C= 10 mAdc

Vdc

V_(BR)

CEO

Collector-Base Cutoff Current

V_CB= 60 Vdc

V_CB= 75 Vdc; I_c= 10 mAdc

Emitter-Base Cutoff Current

V_EB= 4.0Vdc

I_CBO

hAdc

mAdc

I_EBO

hAdc

mAdc

V_EB= 6.0Vdc; I_c= 10 mAdc

6 Lake Street, Lawrence, MA 01841

120101

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

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