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2N7000 PDF预览

2N7000

更新时间: 2024-11-30 06:25:11
品牌 Logo 应用领域
SEMIWELL 晶体晶体管开关
页数 文件大小 规格书
6页 718K
描述
Logic N-Channel MOSFET

2N7000 数据手册

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SemiWell Semiconductor  
2N7000  
Logic N-Channel MOSFET  
Features  
RDS(on) (Max 5 )@VGS=10V  
3. Drain  
Symbol  
{
RDS(on) (Max 5.3)@VGS=4.5V  
Gate Charge (Typical 0.5nC)  
2. Gate  
{
Maximum Junction Temperature Range (150°C)  
{
1. Source  
TO-92  
General Description  
This Power MOSFET is produced using planar DMOS technology.  
And this Power MOSFET is well suited for Battery switch, Load  
switch, Motor controller and other small signal switches.  
1
2
3
Absolute Maximum Ratings  
Symbol  
VDSS  
ID  
Parameter  
Value  
60  
Units  
V
Drain to Source Voltage  
Continuous Drain Current(@TA = 25°C)  
Drain Current Pulsed  
200  
mA  
mA  
V
IDM  
(Note 1)  
500  
VGS  
Gate to Source Voltage  
±20  
0.4  
Total Power Dissipation Single Operation (TA=25°C)  
Total Power Dissipation Single Operation (TA=70°C)  
Operating Junction Temperature & Storage Temperature  
W
mW  
°C  
PD  
3.2  
TSTG, TJ  
- 55 ~ 150  
300  
Maximum Lead Temperature for soldering purpose,  
1/8 from Case for 10 seconds.  
TL  
°C  
Thermal Characteristics  
Value  
Symbol  
Parameter  
Units  
Min.  
Typ.  
Max.  
RθJA  
Thermal Resistance, Junction-to-Ambient  
-
-
312.5  
°C/W  
January, 2003. Rev. 0.  
1/6  
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.  

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