Datasheet > 2N7000/D

2N7000/D

更新时间： 2024-11-08 23:19:51

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描述
Small Signal MOSFET 200 mAmps， 60 Volts

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中文翻译

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数据手册

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2N7000/D 数据手册

2N7000

Preferred Device

Small Signal MOSFET

200 mAmps, 60 Volts

N–Channel TO–92

MAXIMUM RATINGS

http://onsemi.com

Rating

Drain Source Voltage

Drain–Gate Voltage (R

Symbol

Value

Unit

Vdc

200 mAMPS

60 VOLTS

DSS

= 1.0 MΩ)

DGR

= 5 Ω

DS(on)

Gate–Source Voltage

– Continuous

±ā20

±ā40

Vdc

Vpk

N–Channel

– Non–repetitive (t ≤ 50 µs)

GSM

Drain Current

– Continuous

– Pulsed

mAdc

200

500

Total Power Dissipation @ T = 25°C

Derate above 25°C

350

2.8

mW/°C

Operating and Storage Temperature

Range

T , T

–55 to

+150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to

Ambient

357

°C/W

TO–92

CASE 29

Style 22

θJA

Maximum Lead Temperature for

Soldering Purposes, 1/16″ from case

for 10 seconds

300

°C

MARKING DIAGRAM

& PIN ASSIGNMENT

2N7000

YWW

Source

Drain

Gate

= Year

= Work Week

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2000

Publication Order Number:

November, 2000 – Rev. 5

2N7000/D

12 3 4

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