Datasheet > 2N7000/E7

2N7000/E7

更新时间： 2024-11-08 23:19:51

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
5页	211K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 300MA I(D) \| TO-226AA

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中文翻译

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数据手册

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2N7000/E7 数据手册

2N7000

Vishay Semiconductors

formerly General Semiconductor

DMOS Transistor (N-Channel)

TO-226AA (TO-92)

0.142 (3.6)

0.181 (4.6)

Features

• High input impedance

• Low gate threshold voltage

• Low drain-source ON-resistance

• High-speed switching

• No minority carrier storage time

• CMOS logic compatible input

• No thermal runaway

• No secondary breakdown

max.

0.022 (0.55)

Mechanical Data

Case: TO-92 Plastic Package

0.098 (2.5)

Dimensions in inches

and (millimeters)

Weight: approx. 0.18g

Packaging Codes/Options:

E7/4K per Ammo tape, 20K/box

Bottom

View

Maximum Ratings and Thermal Characteristics (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_DSS

V_DGS

V_GS

I_D

Limit

Unit

Drain-Source Voltage

Drain-Gate Voltage

Gate-Source-Voltage (pulsed)

Drain Current (continuous)

Peak Drain Current (pulsed)

Power Dissipation at T_amb= 25°C

Thermal Resistance Junction to Ambient Air

Junction Temperature

300

I_DM

1.3

P_tot

830⁽¹⁾

°C/W

°C

R_θJA

T_j

150⁽¹⁾

150

Storage Temperature Range

T_S

–65 to +150

°C

Note:

(1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case.

Document Number 88119

10-May-02

www.vishay.com

12 3 4 5

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