Datasheet > 2N7000

2N7000

更新时间： 2024-12-02 14:55:51

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
5页	438K
描述
TO-92

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中文翻译

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数据手册

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2N7000 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

ꢀTO-92 Plastic-Encapsulate MOSFETꢁ

2N7000

MOSFET (N-Channel)

I_D

V_(BR)DSS

R_DS(on)MAX

TO-92

ꢇ

ꢆ ꢈꢄꢅꢀ

ꢀꢃ

ꢅ

ꢁꢄ

ꢂꢄꢄꢉ

ꢊ

1. SOURCE

2. GATE

ꢇ

ꢁꢆ ꢋꢌꢃꢅꢀ

ꢀ

3. DRAIN

APPLICATION

FEATURE

ꢀ

ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢍꢎꢏꢐꢀꢑꢒꢓ!ꢔ"ꢀ#ꢎ$ꢀ%ꢎ$!ꢏ&ꢕꢖꢀ'ꢖ(ꢓꢔꢖ)

ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ^ꢀꢀꢀꢀꢀ'*+'*ꢀ*ꢎ,(ꢖ$!ꢖ$ꢀꢀꢀ

ꢀ

High density cell design for low R_DS(ON)

Voltage controlled small signal switch

Rugged and reliable

High saturation current capability

Equivalent Circuit

MARKING

ꢂ3ꢙꢄꢄꢄ4'ꢖ(ꢓꢔꢖꢀꢔꢎꢐꢖꢀ

7000

ꢄꢄꢄ

ꢀ

ꢑꢎꢕꢓꢐꢀꢐꢎ!45$ꢖꢖ,ꢀꢉꢎꢕꢐꢓ,ꢚꢀꢔꢎꢉ2ꢎꢘ,ꢐꢀꢐꢖ(ꢓꢔꢖꢛꢀ

ꢀꢓ#ꢀ,ꢎ,ꢖꢛ!"ꢖꢀ,ꢎ$ꢉꢏꢕꢀꢐꢖ(ꢓꢔꢖ

6664*ꢎꢐꢖꢀ

ORDERING INFORMATIONꢀ

Part Number

Package

ꢀ-.ꢗ/ꢂꢀ

Packing Method

0ꢘꢕ1ꢀ

Pack Quantity

1000pcs/Bag

2000pcs/Box

ꢂ3ꢙꢄꢄꢄ

ꢗ-ꢊ

ꢂ3ꢙꢄꢄꢄ

-ꢏ2ꢖꢀ

MAXIMUM RATINGS (T^a=25G unless otherwise noted)

Parameter

Symboꢂ

Valuꢃ

Unit

Drain-Source Voltage

V_DS

I_D

Continuous Drain Current

0.2

Power Dissipation

P_{D ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ}0. ꢁꢂꢃ

Thermal Resistance from Junction to Ambient

Operation Junction and Storage Temperature Range

R_ꢀJA

ꢂꢄꢄ

G /W

T_J,T_stg

-5ꢃ ~+150

www.jscj-elec.com

Rev. - 2.0

12 3 4 5

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与2N7000相关器件

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2N7000_07	STMICROELECTRONICS	获取价格	N-channel 60V - 1.8Ω - 0.35A - SOT23-3L / TO-
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