Datasheet > 2N7000

2N7000

更新时间： 2024-12-02 14:52:59

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
6页	335K
描述
小信号金氧半電晶體

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中文翻译

获取价格

数据手册

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2N7000 数据手册

2N7000

N-Channel Enhancement Mode MOSFET

Drain

Gate

Source

1. Source 2.Gate 3.Drain

TO-92 Plastic Package

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_DSS

Value

Unit

Drain Source Voltage

Drain-Gate Voltage (R_GS= 1 MΩ)

V_DGR

V_GS

V_GSM

± 20

± 40

Gate-source Voltage

Continuous

Non-repetitive ( tp ≤ 50 μs)

I_D

I_DM

P_D

T_j

200

500

350

Continuous Drain Current

Peak Drain Current, Pulsed ¹⁾

Total Power Dissipation

Operating Junction Temperature

Storage Temperature Range

150

℃

T_stg

- 55 to + 150

℃

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

357

Unit

Thermal Resistance from Junction to Ambient

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%,Repetitive rating, pulse width limited by junction temperature T_J(MAX)=150°C.

℃/W

1 / 6

Dated : 22/08/2022 Rev:06

12 3 4 5 6

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