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2N7000 PDF预览

2N7000

更新时间: 2024-11-29 22:12:19
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管开关
页数 文件大小 规格书
5页 53K
描述
N-Channel 60-V (D-S) MOSFET

2N7000 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.21Is Samacsys:N
配置:Single最大漏极电流 (Abs) (ID):0.2 A
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-609代码:e0
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.4 W
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

2N7000 数据手册

 浏览型号2N7000的Datasheet PDF文件第2页浏览型号2N7000的Datasheet PDF文件第3页浏览型号2N7000的Datasheet PDF文件第4页浏览型号2N7000的Datasheet PDF文件第5页 
2N7000/2N7002, VQ1000J/P, BS170  
Vishay Siliconix  
N-Channel 60-V (D-S) MOSFET  
PRODUCT SUMMARY  
Part Number V(BR)DSS Min (V) rDS(on) Max (W)  
VGS(th) (V)  
ID (A)  
5 @ V = 10 V  
0.8 to 3  
1 to 2.5  
0.2  
2N7000  
2N7002  
VQ1000J  
VQ1000P  
BS170  
GS  
7.5 @ V = 10 V  
0.115  
0.225  
0.225  
0.5  
GS  
60  
5.5 @ V = 10 V  
0.8 to 2.5  
0.8 to 2.5  
0.8 to 3  
GS  
5.5 @ V = 10 V  
GS  
5 @ V = 10 V  
GS  
FEATURES  
BENEFITS  
APPLICATIONS  
D Low On-Resistance: 2.5 W  
D Low Threshold: 2.1 V  
D Low Offset Voltage  
D Direct Logic-Level Interface: TTL/CMOS  
D Low-Voltage Operation  
D Easily Driven Without Buffer  
D High-Speed Circuits  
D Low Error Voltage  
D Drivers: Relays, Solenoids, Lamps, Hammers,  
Displays, Memories, Transistors, etc.  
D Low Input Capacitance: 22 pF  
D Fast Switching Speed: 7 ns  
D Low Input and Output Leakage  
D Battery Operated Systems  
D Solid-State Relays  
TO-226AA  
(TO-92)  
TO-236  
(SOT-23)  
1
2
3
S
G
D
G
S
1
2
3
D
Top View  
Marking Code: 72wll  
Top View  
2N7000  
72 = Part Number Code for 2N7002  
w = Week Code  
ll = Lot Traceability  
Dual-In-Line  
D
S
D
S
1
4
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
TO-92-18RM  
(TO-18 Lead Form)  
N
N
1
4
G
1
G
4
1
2
3
D
G
S
NC  
NC  
G
2
S
2
D
2
G
3
3
S
N
N
D
3
8
Top View  
Top View  
BS170  
Plastic: VQ1000J  
Sidebraze: VQ1000P  
Document Number: 70226  
S-04279—Rev. F, 16-Jul-01  
www.vishay.com  
11-1  

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