Datasheet > 2N7000

2N7000

更新时间： 2024-11-30 07:29:15

品牌	Logo	应用领域
友顺 - UTC		晶体晶体管开关
页数	文件大小	规格书
5页	155K
描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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2N7000 数据手册

UTC 2N7000

MOSFET

N-CHANNEL ENHANCEMENT

MODE FIELD EFFECT

TRANSISTOR

DESCRIPTION

The UTC 2N7000 has been designed to minimize

on-state resistance while provide rugged, reliable, and fast

switching performance. It can be used in most applications

requiring up to 400mA DC and can deliver pulsed currents

up to 2A. The product is particularly suited for low voltage,

low current applications such as small servo motor control,

power MOSFET gate drivers, and other switching

applications

FEATURES

TO-92

*High density cell design for low R_DS(ON)

*Voltage controlled small signal switch

*Rugged and reliable

*High saturation current capability

1: SOURCE 2: GATE 3: DRAIN

ABSOLUTE MAXIMUM RATINGS _{( Ta=25°C )}

PARAMETER

SYMBOL RATINGS

UNIT

Drain-Source Voltage

V_DSS

V_DGR

V_GSS

±20

Drain-Gate Voltage(R_GS≤1MΩ)

Gate -Source Voltage-Continuous

-Non Repetitive (tp<50µs)

±40

Maximum Drain Current-Continuous

-Pulsed

I_D

115

800

Maximum Power Dissipation

Derated above 25°C

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purposes, 1/16” from Case

for 10 Seconds

P_D

400

3.2

-55 to +150

300

mW/°C

°C

T_J,T_STG

T_L

°C

THERMAL CHARACTERISTICS

PARAMETER

Thermal Resistance, Junction-to-Ambient

SYMBOL RATINGS

R_θJA312.5

UNIT

°C/W

UTC UNISONIC TECHNOLOGIES CO., LTD.

QW-R201-064,A

12 3 4 5

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