Datasheet > 2N7000

2N7000

更新时间： 2024-09-17 06:16:47

品牌	Logo	应用领域
SECOS		晶体晶体管开关
页数	文件大小	规格书
3页	358K
描述
N-Channel Enhancement Mode Power Mos.FET

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2N7000 数据手册

2N7000

200mA,60V,RDS(ON) 6

Elektronische Bauelemente

N-Channel Enhancement Mode Power Mos.FET

RoHS Compliant Product

TO-92

Description

The 2N7000 is designed for high voltage, high

speed applications such as switching regulators,

converters, solenoid and relay drives.

SEATING

PLANE

Drain

Millimeter

REF.

Min.

Max.

4.7

Min.

4.44

3.30

12.70

1.150

2.42

Max.

4.7

3.81

Gate

4.45

1.02

0.36

0.51

0.76

0.51

Source

1.390

2.66

Absolute Maximum Ratings

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

VDS

Gate-Source Voltage

±20

-Continuous

VGS

VGSM

±40

-Non-Repetitive (tp≦ 50us)

Drain Current

200

-Continuous

-Pulsed

IDM

500

- TA=25^oC

-Derate Above

Power Dissipation

0.35

2.8

25^o

mW/ ^oC

^oC

357

RθJA

Thermal Resistance, Junction-To-Ambient

^oC

Tj, Tstg

-55~+150

300

Operating Junction and Storage Temperature Range

Max. Lead Temperature For Soldering Purposes,

1/16" From Case For 10 Seconds

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 3

12 3

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