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2N7000 PDF预览

2N7000

更新时间: 2024-11-06 05:57:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体小信号场效应晶体管开关
页数 文件大小 规格书
14页 356K
描述
N-channel 60V - 1.8Ω - 0.35A - SOT23-3L / TO-92 STripFET™ Power MOSFET

2N7000 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.51其他特性:LOW THRESHOLD
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):0.35 A最大漏极电流 (ID):0.35 A
最大漏源导通电阻:5.3 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2N7000 数据手册

 浏览型号2N7000的Datasheet PDF文件第2页浏览型号2N7000的Datasheet PDF文件第3页浏览型号2N7000的Datasheet PDF文件第4页浏览型号2N7000的Datasheet PDF文件第5页浏览型号2N7000的Datasheet PDF文件第6页浏览型号2N7000的Datasheet PDF文件第7页 
2N7000  
2N7002  
N-channel 60V - 1.8- 0.35A - SOT23-3L / TO-92  
STripFET™ Power MOSFET  
Features  
Type  
VDSS  
RDS(on)  
ID  
3
2N7000  
2N7002  
60V  
60V  
<5(@10V) 0.35  
<5(@10V) 0.20  
2
1
Low Qg  
Low threshold drive  
SOT23-3L  
TO-92  
Application  
Switching applications  
Description  
This MOSFET is the second generation of  
STMicroelectronics unique “Single Feature  
Size™” strip-based process. The resulting  
transistor shows extremely high packing density  
for low on-resistance, rugged avalanche  
characteristics and less critical alignment steps  
therefore a remarkable manufacturing  
reproducibility.  
Figure 1.  
Internal schematic diagram  
SOT23-3L  
TO-92  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
2N7000  
2N7002  
2N7000G  
ST2N  
TO-92  
Bulk  
SOT23-3L  
Tape & reel  
September 2007  
Rev 8  
1/14  
www.st.com  
14  

2N7000 替代型号

型号 品牌 替代类型 描述 数据表
2N7000RLRAG ONSEMI

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2N7000 FAIRCHILD

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